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    FLL101ME Search Results

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    FLL101ME Price and Stock

    Fuji Electric Co Ltd FLL101ME

    MESFET Transistor, N-CHAN, SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL101ME 5
    • 1 $75.4
    • 10 $75.4
    • 100 $75.4
    • 1000 $75.4
    • 10000 $75.4
    		Buy Now

    FUJITSU Semiconductor Limited FLL101ME

    MESFET Transistor, N-CHAN, SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL101ME 1
    • 1 $150.3872
    • 10 $150.3872
    • 100 $150.3872
    • 1000 $150.3872
    • 10000 $150.3872
    		Buy Now

    FLL101ME Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL101ME Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLL101ME Unknown FET Data Book Scan PDF

    FLL101ME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLL101ME

    Abstract: FLL101
    Text: FLL101ME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL101ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL101ME FLL101ME It035 FLL101

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171

    FLL101ME

    Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
    Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)


    OCR Scan     		PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLL101ME

    Abstract: No abstract text available
    Text: FLLIOIME m ir r c ii r UJ11jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1c|B=29.5dBnn Typ. • • • • High Gain: G-|C|b = 13-5cIB (Typ) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION


    OCR Scan     		PDF UJ11jU 13-5cIB FLL101ME FLL101ME

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK