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    FLL55 Search Results

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    FLL55 Price and Stock

    ebm-papst 512FLL-555

    DC Tubeaxial Fan
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 512FLL-555
    • 1 $25.29
    • 10 $22.56
    • 100 $18.51
    • 1000 $17.04
    • 10000 $17.04
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    FLL55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLL55MK

    Abstract: FLL55 TH 2267
    Text: F|.fjVç-. FLL55MK J L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P-idg = 36.0dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to


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    PDF FLL55MK FLL55MK FLL55 TH 2267

    FLL55

    Abstract: FLL55MK fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
    Text: FLL55MK L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • • • • High Gain: G-|dB = 11 -5clB (TyP) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to


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    PDF FLL55MK FLL55MK FLL55 fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook

    FLL55

    Abstract: 4030p
    Text: FLL55MK L-Band Medium & High Power GaAs / /:7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 21.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature


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    PDF FLL55MK FLL55 4030p

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


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    PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


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    PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171

    FLL55

    Abstract: FLL100
    Text: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115


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    PDF DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


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    PDF

    FLL55

    Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
    Text: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140


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    PDF DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100 FLS-330 FLL15 fll57 FLL-770

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


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    PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


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    PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK