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    FLL15 Search Results

    FLL15 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL1500IU-2A Fujitsu L-Band High Power GaAs FET Original PDF
    FLL1500IU-2C Fujitsu FET, P Channel, ID 16 A Original PDF
    FLL1500IU-2C Unknown L-Band High Power GaAs FET Original PDF
    FLL151 Unknown TTL Data Book 1980 Scan PDF

    FLL15 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLL1500IU-2C

    Abstract: imt 901 L-band 500 watt amplifier FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C 12-R0 imt 901 L-band 500 watt amplifier FLL1500 PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


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    IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


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    IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500 PDF

    FLL1500IU-2C

    Abstract: fujitsu l-band power fets FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C fujitsu l-band power fets FLL1500 PDF

    FLL1500IU-2C

    Abstract: imt 901 FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C imt 901 FLL1500 PDF

    FLL1500IU-2C

    Abstract: eudyna GaAs FET Amplifier
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier PDF

    FLL1500IU-2C

    Abstract: No abstract text available
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C FCSI1199M200 PDF

    12R05

    Abstract: imt 901 FLL1500IU-2C
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C FCSI1199M200 12R05 imt 901 PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original
    IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching PDF

    Fujitsu GaAs FET Amplifier design

    Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2A FLL1500IU-2A FCSI0299M200 Fujitsu GaAs FET Amplifier design FLL1500 Fujitsu GaAs FET Amplifier PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


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    CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 PDF

    Fujitsu GaAs FET application note

    Abstract: 0-180-degree FLL1500IU-2C Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15
    Text: APPLICATION NOTE NUMBER 014 THE POSSIBILITIES ARE INFINITE Reprint of Technical Paper Presented at Wireless Symposium 2001 High Power GaAs FET Amplifiers: Push-Pull versus Balanced Configurations Presented by Jon Shumaker FUJITSU COMPOUND SEMICONDUCTOR, INC.


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    FLL1500IU-2C Fujitsu GaAs FET application note 0-180-degree Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15 PDF

    Fujitsu GaAs FET application note

    Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
    Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since


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    MTT-28, Fujitsu GaAs FET application note FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz PDF

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design FLL1500IU-2A fujitsu gaas fet L-band
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


    OCR Scan
    FLL1500IU-2A FLL1500IU-2A FCSI0299M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet L-band PDF

    FLL55

    Abstract: FLL100
    Text: FILTERS LOW PASS L ea b l e s s S urf ac e M o u n t M. o d e l s -. ^ L o w C ose Fc MHz LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140 96 115


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    DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan
    FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL55

    Abstract: FLL100 FLS-330 FLL15 fll57 FLL-770
    Text: FILTERS LOW PASS L e a d í .,e s s S u /tF A C fì-iM o i's r M o n t i ,.v i j w C ost Fc MHz) LOSS = 3 dB (Nom) PASSBAND LOSS < 1 dB (MHz) >35 dB >23 dB 12 24 33 DC-10.7 DC-21.4 DC-30 21 42 58 19 37 51 55; 66 77 100 154 DC-50 DC-60 DC-70 DC-92 DC-140


    OCR Scan
    DC-10 DC-21 DC-30 DC-50 DC-60 DC-70 DC-92 DC-140 DC-200 DC-300 FLL55 FLL100 FLS-330 FLL15 fll57 FLL-770 PDF

    K155LE1

    Abstract: K155LA8 K155AG3 K155LA3 K155LP5 K155AG1 K155TM2 K155KP2 k155tl2 K155TL1
    Text: Table of Equivalent TTL-IC Values [This table is reprinted from the December 1985 RadioAmater, the journal of the Yugoslavia Amateur Radio Society.— Ed.] NATIONAL SEMICOND NEC RFT USSR FAIRCHILD SIEMENS PHILIPS DM8000N ftPB201 D110C K155LA3 FJH131 FLH101


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    SN7400N F9N00PC FJH131 FLH101 DM8000N ftPB201 D110C K155LA3 SN7401N F9N01PC K155LE1 K155LA8 K155AG3 K155LP5 K155AG1 K155TM2 K155KP2 k155tl2 K155TL1 PDF