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    FLL1500 Search Results

    FLL1500 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLL1500IU-2A Fujitsu L-Band High Power GaAs FET Original PDF
    FLL1500IU-2C Fujitsu FET, P Channel, ID 16 A Original PDF
    FLL1500IU-2C Unknown L-Band High Power GaAs FET Original PDF

    FLL1500 Datasheets Context Search

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    FLL1500IU-2C

    Abstract: imt 901 L-band 500 watt amplifier FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C 12-R0 imt 901 L-band 500 watt amplifier FLL1500

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    FLL1500IU-2C

    Abstract: fujitsu l-band power fets FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C fujitsu l-band power fets FLL1500

    FLL1500IU-2C

    Abstract: imt 901 FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C imt 901 FLL1500

    FLL1500IU-2C

    Abstract: eudyna GaAs FET Amplifier
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier

    FLL1500IU-2C

    Abstract: No abstract text available
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C FCSI1199M200

    12R05

    Abstract: imt 901 FLL1500IU-2C
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2C FLL1500IU-2C FCSI1199M200 12R05 imt 901

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching

    Fujitsu GaAs FET Amplifier design

    Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 Fujitsu GaAs FET Amplifier design FLL1500 Fujitsu GaAs FET Amplifier

    Fujitsu GaAs FET application note

    Abstract: 0-180-degree FLL1500IU-2C Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15
    Text: APPLICATION NOTE NUMBER 014 THE POSSIBILITIES ARE INFINITE Reprint of Technical Paper Presented at Wireless Symposium 2001 High Power GaAs FET Amplifiers: Push-Pull versus Balanced Configurations Presented by Jon Shumaker FUJITSU COMPOUND SEMICONDUCTOR, INC.


    Original     		PDF FLL1500IU-2C Fujitsu GaAs FET application note 0-180-degree Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15

    Fujitsu GaAs FET application note

    Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
    Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since


    Original     		PDF MTT-28, Fujitsu GaAs FET application note FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz

    fujitsu gaas fet

    Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design FLL1500IU-2A fujitsu gaas fet L-band
    Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet L-band

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet