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    FLR016FH Search Results

    FLR016FH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLR016FH Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLR016FH Unknown FET Data Book Scan PDF

    FLR016FH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLR016FH

    Abstract: fujitsu gaas fet
    Text: FLR016FH K-Band Power GaAs FETs FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.5dB(Typ.) N• High PAE: hadd = 26%(Typ.) O T • Proven Reliability REC OM DESCRIPTION ME FET that is designed for The FLR016FH chip is a power GaAs N


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    PDF FLR016FH FLR016FH 12MAG fujitsu gaas fet

    FLR016FH

    Abstract: No abstract text available
    Text: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for


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    PDF FLR016FH FLR016FH

    Untitled

    Abstract: No abstract text available
    Text: FLR016FH K - B a n d Power GaAs FE i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Condition Item Rating Unit Drain-Source Voltage vds 12 V Gate-Source Voltage vgs -4 V 1.0 w °c °c 1013! rO W B i UtSSipflwlOit Tc = 25°C Pt Storage Temperature


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    PDF FLR016FH 3000Q.

    FLR024FH

    Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
    Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D


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    PDF FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


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    PDF

    FLK202MH-14

    Abstract: FLK052WG
    Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH


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    PDF FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG