FLK022W Search Results

FLK022W Price and Stock

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FUJITSU Limited FLK022WG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLK022WG		24			1 $52.004 10 $52.004 100 $44.2034 1000 $44.2034 10000 $44.2034	Buy Now
	FLK022WG		3			1 $62.4048 10 $62.4048 100 $62.4048 1000 $62.4048 10000 $62.4048	Buy Now
Fuji Electric Co Ltd FLK022WG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLK022WG		4			1 $62.4048 10 $59.2846 100 $59.2846 1000 $59.2846 10000 $59.2846	Buy Now
Fuji Electric Co Ltd FLK022WGHL205 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FLK022WGHL205		115			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLK022W Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLK022WG		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLK022WG		Unknown	FET Data Book		Scan	PDF

FLK022W Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FLK022WG Abstract: FLK022W FLK022 Text: FLK022WG X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general	Original	FLK022WG FLK022WG FLK022W FLK022	PDF
FLK022WG Abstract: 17laD FLK022 Text: FLK022WG X- Ku B a n d Power GaAs I E Is ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 1.875 w Total Power Dissipation Tc = 25°C Pt Storage Temperature	OCR Scan	FLK022WG 2000Q FLK022WG 17laD FLK022	PDF
Untitled Abstract: No abstract text available Text: FLK022WG FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general	OCR Scan	FLK022WG FLK022WG	PDF
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan		PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK	PDF
FLK202MH-14 Abstract: FLK052WG Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <tB) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH	OCR Scan	FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG	PDF