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    onsemi FQA11N90C

    MOSFET N-CH 900V 11A TO3P
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    DigiKey FQA11N90C Tube 450
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    onsemi FQA11N90C-F109

    MOSFET N-CH 900V 11A TO3P
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    Newark FQA11N90C-F109 Bulk 450
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    Flip Electronics FQA11N90C-F109 1,800
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    onsemi FQA11N90C_F109

    Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA11N90C-F109)
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    Avnet Americas FQA11N90C_F109 Tube 0 Weeks, 2 Days 178
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    Fairchild Semiconductor Corporation FQA11N90C_F109

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    Quest Components FQA11N90C_F109 4
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    FQA11N90C Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel Advanced QFET C-Series Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA11N90C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11A TO-3P Original PDF

    FQA11N90C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 60 nC) produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C

    F109

    Abstract: FQA11N90C FQA11N90C_F109
    Text: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C F109 FQA11N90C_F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		PDF FQA11N90C

    FQA11N90C

    Abstract: F109 FQA11N90C_F109
    Text: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C FQA11N90C F109 FQA11N90C_F109

    Untitled

    Abstract: No abstract text available
    Text: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA11N90C

    FQA11N90C

    Abstract: No abstract text available
    Text: FQA11N90C FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA11N90C FQA11N90C

    FQA9N90C equivalent

    Abstract: Rudy Severns "Safe Operating Area and Thermal Design" mospower applications handbook 2kw mosfet FQA11N90C Severns power mosfet 7515 siliconix mosfet discontinued AN-7514
    Text: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size


    Original     		PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    IRF250N

    Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
    Text: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100


    Original     		PDF 2N5881 O-204AA/TO-3 DTS4067 DTS424 O-204AA/TO-3: DTS425 IRF250N ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714

    fqa38n30

    Abstract: IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009
    Text: Date Created: 3/3/2004 Date Issued: 3/10/2004 PCN # 20040605-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is the first revision of the PCN 20040605 to issue Final PCN. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0040605-A KSC3552OTU KSC4010RTU KSC5024YTU KSC5025YTU KSC5030OTU SFH154 SFH9240 SSH10N60B SSH7N60B fqa38n30 IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009