Untitled
Abstract: No abstract text available
Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
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FQPF10N50CF
Abstract: fqpf10n50
Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
fqpf10n50
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FQPF10N50CF
Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
FQPF Series
mosfet 500v 10A
mosfet 10a 500v
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Untitled
Abstract: No abstract text available
Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode
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KSM10N50CF/KSMF10N50CF
O-220F
O-220
54TYP
00x45Â
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