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    FQP10N50CF Search Results

    FQP10N50CF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQP10N50CF Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FQP10N50CF FQPF10N50CF FQPF10N50CF PDF

    FQPF10N50CF

    Abstract: fqpf10n50
    Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original
    FQP10N50CF FQPF10N50CF FQPF10N50CF fqpf10n50 PDF

    FQPF10N50CF

    Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FQP10N50CF FQPF10N50CF FQPF10N50CF FQPF Series mosfet 500v 10A mosfet 10a 500v PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode


    Original
    KSM10N50CF/KSMF10N50CF O-220F O-220 54TYP 00x45Â PDF