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    FSF250R4 Search Results

    FSF250R4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSF250R4 Fairchild Semiconductor 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSF250R4 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

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    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 1-800-4-HARRIS

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 FSF250R4

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406

    ic 4046

    Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF250D, FSF250R ic 4046 FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R

    1E14

    Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF250D, FSF250R 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSF250D, FSF250R

    Rad hard MOSFETS in Harris

    Abstract: No abstract text available
    Text: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250R4 JANSR2N7406 MIL-STD-750, MIL-S-19500, 100ms; 500ms; Rad hard MOSFETS in Harris

    Untitled

    Abstract: No abstract text available
    Text: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250D, FSF250R MIL-STD-750, MIL-S-19500, 100ms, 500ms,

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250D, FSF250R MIL-S-19500

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan
    PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404