Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FSF250R Search Results

    FSF250R Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSF250R Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R1 Fairchild Semiconductor 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSF250R1 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R3 Fairchild Semiconductor 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R3 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R4 Fairchild Semiconductor 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSF250R4 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSF250R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 4046

    Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF250D, FSF250R ic 4046 FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 1-800-4-HARRIS

    DATA SHEET IC 4046

    Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
    Text: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original
    PDF FSF250D, FSF250R 36MeV/mg/cm2 to1E14 O-254AA 1-800-4-HARRIS DATA SHEET IC 4046 FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 FSF250R4

    1E14

    Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF250D, FSF250R 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSF250D, FSF250R

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406

    Untitled

    Abstract: No abstract text available
    Text: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan
    PDF FSF250D, FSF250R O-254AA 36MeV/mg/cm2 110ft 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250D, FSF250R MIL-STD-750, MIL-S-19500, 100ms, 500ms,

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250D, FSF250R MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan
    PDF FSF250D, FSF250R O-254AA 36MeV/mg/cm2 to1E14 1-800-4-HARRIS

    Rad hard MOSFETS in Harris

    Abstract: No abstract text available
    Text: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250R4 JANSR2N7406 MIL-STD-750, MIL-S-19500, 100ms; 500ms; Rad hard MOSFETS in Harris

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M a W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS ON = 0.110£1 • Total Dose • Single Event TO-254AA - M eets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan
    PDF FSF250D, FSF250R O-254AA 1-800-4-HARRIS

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan
    PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan
    PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan
    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40