Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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2N7218
Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7218,
JANTX2N7218,
JANTXV2N7218
2N7219,
JANTX2N7219,
JANTXV2N7219
2N7221,
JANTX2N7221,
JANTXV2N7221
2N7222,
2N7218
2N7219
2N7221
2N7222
JANTX2N7218
JANTX2N7219
JANTX2N7221
JANTX2N7222
JANTXV2N7218
JANTXV2N7219
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2N7224
Abstract: 2N7224U
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7224 2N7224U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/592
2N7224
2N7224U
10Vdc,
50Vdc
T4-LDS-0102
2N7224
2N7224U
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PDF
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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PDF
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2E12
Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF150D,
FSF150R
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
FSF150R3
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PDF
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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PDF
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TO3 RthJA
Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Text: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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93792C
O-254AA)
IRHM57064
IRHM53064
IRHM54064
IRHM58064
1000K
O-254AA.
MIL-PRF-19500
TO3 RthJA
IRHM53064
IRHM54064
IRHM57064
IRHM58064
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PDF
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spice models
Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Text: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International
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90490D
O-254AA)
IRFM340
JANTX2N7221
JANTXV2N7221
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
spice models
IRFM340
JANTX2N7221
JANTXV2N7221
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PDF
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OM3N100ST
Abstract: OM1N100SA OM1N100ST OM3N100SA OM5N100SA OM6N100SA
Text: OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on
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OM1N100SA
OM5N100SA
OM1N100ST
OM3N100SA
OM6N100SA
OM3N100ST
MIL-19500,
MAXIMU45
OM3N100ST
OM1N100ST
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PDF
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OM6505SA
Abstract: OM6506SA
Text: OM6505SA OM6506SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage
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OM6505SA
OM6506SA
O-254AA
MIL-S-19500,
OM6505SA
OM6506SA
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PDF
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FRF9250R
Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Text: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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FRF9250D,
FRF9250R,
FRF9250H
-200V,
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRF9250R
1E14
2E12
FRF9250D
FRF9250H
Rad Hard in Fairchild for MOSFET
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PDF
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FSGJ264R3 equivalent
Abstract: 1E14 2E12 FSGJ264D1 FSGJ264R FSGJ264R3 FSGJ264R4
Text: FSGJ264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGJ264R
FSGJ264R
FSGJ264R3 equivalent
1E14
2E12
FSGJ264D1
FSGJ264R3
FSGJ264R4
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PDF
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IRG4MC50U
Abstract: No abstract text available
Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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-94273A
IRG4MC50U
O-254AA.
MIL-PRF-19500
IRG4MC50U
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PDF
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2N7073
Abstract: No abstract text available
Text: C rS iica n ix J iÆ 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V BR DSS r DS(ON) >D (V) <fi) (A) 400 0.55 9.0 2 SOURCE 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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OCR Scan
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2N7073
O-254AA
10peration
2N7073
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PDF
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2N7076
Abstract: No abstract text available
Text: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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OCR Scan
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2N7076
O-254AA
1503C)
P-36736--Rev.
2N7076
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PDF
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2N7227
Abstract: SV400
Text: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated
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OCR Scan
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2N7227JANTX/JANTXV
-S-19500I592
O-254AA
1503C)
p-37164--Rev.
2N7227
SV400
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PDF
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2N7074
Abstract: No abstract text available
Text: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated
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OCR Scan
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62SM73S
2N7074
O-254AA
THERMG01ba21
T-39-13
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PDF
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2N7268
Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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OCR Scan
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IRHM7150
IRHM815Q
IRHM8150
JANSRSN7S68
1x106
1x105
IRHM71500
IRHM7150U
2N7268
h206
h208
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PDF
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Untitled
Abstract: No abstract text available
Text: OM5257SA/RA/DA OM5259SA/RA/DA OM5258SA/RA/DA OM526QSA/RA/DA HERMETIC JEDEC TO-254AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 40 Amp, 50 To 200 Volts, 50 ns trr FEATURES Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package, JEDEC TO-254AA Outline
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OCR Scan
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OM5257SA/RA/DA
OM5259SA/RA/DA
OM5258SA/RA/DA
OM526QSA/RA/DA
O-254AA
MIL-S-19500,
OM5257XX
OM5258XX
OM5259XX
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PDF
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
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OCR Scan
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2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
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PDF
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IGBT 50 amp 1000 volt
Abstract: 10 amp igbt 1000 volt OM6517SA OM6526SA transistor tc 144
Text: 0M 6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Am p, N-Channel IGBT In A Herm etic Metal Package FEATURES • • • • • • • • Isolated IG BTs In A Herm etic Package High Input Im pedance
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OCR Scan
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0M6517SA
OM6526SA
O-254AA
MIL-S-19500,
IGBT 50 amp 1000 volt
10 amp igbt 1000 volt
OM6517SA
OM6526SA
transistor tc 144
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PDF
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2N7224 JANTXV
Abstract: 3000CL 2N7224 IRFM150
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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OCR Scan
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IRFM150
MIL-S-19500/595]
IRFM150D
IRFM150U
O-254
MIL-S-19500
S5M52
2N7224 JANTXV
3000CL
2N7224
IRFM150
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PDF
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T3D DIODE
Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Text: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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OCR Scan
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IRFM450
MIL-S-1S500/592]
irfm450d
irfm450u
O-254
Mll-S-19500
00n4S7
T3D DIODE
2n7226
mosfet k 1357
T3D 76
T3D 40 DIODE
2N7228 JANTX
T3D 65 diode
T3D 53 diode
t3d diode type
T3D 83 DIODE
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PDF
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