FSF250 Search Results

ic 4046

Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)

Contextual Info: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects

Rad hard MOSFETS in Harris

Contextual Info: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

BU271

Abstract: IRF540 24334 FSN0920
Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A

Contextual Info: h a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M a W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS ON = 0.110£1 • Total Dose • Single Event TO-254AA - M eets Pre-RAD Specifications to 100K RAD (Si)

DATA SHEET IC 4046

Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
Contextual Info: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has

Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

MOSFETS

Abstract: Power MOSFETs
Contextual Info: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: