sem 2105
Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
sem 2105
2E12
FSL9110R4
JANSR2N7411
IC SEM 2105
sem 2106
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Untitled
Abstract: No abstract text available
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
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2E12
Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,
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JANSR2N7411
FSL9110R4
-100V,
R2N74
2E12
FSL9110R4
JANSR2N7411
Rad Hard in Fairchild for MOSFET
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSL9110D, FSL9110R Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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PDF
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FSL9110D,
FSL9110R
-100V,
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1
Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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PDF
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FSL9110D,
FSL9110R
-100V,
2E12
FSL9110D
FSL9110D1
FSL9110D3
FSL9110R
FSL9110R1
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2E12
Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110
Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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Original
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PDF
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FSL9110D,
FSL9110R
-100V,
2E12
FSL9110D
FSL9110D1
FSL9110D3
FSL9110R
FSL9110R1
FSL9110
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Untitled
Abstract: No abstract text available
Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL9110R4
JANSR2N7411
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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IC SEM 2105
Abstract: No abstract text available
Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL9110R4
-100V,
1-30S2
JANSR2N7411
O-205AF
254mm)
IC SEM 2105
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Untitled
Abstract: No abstract text available
Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSL9110D,
FSL9110R
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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7404
Abstract: No abstract text available
Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F
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JANSR2N7272
JANSR2N7275
FRL130R4
FRL230R4
FRL234R4
FRF150R
FRF250R4
FSL130R4
FSL230R4
FSL234R4
7404
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Untitled
Abstract: No abstract text available
Text: FSL9110D, FSL9110R Semiconductor Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSL9110D,
FSL9110R
-100V,
1-800-4-HARRIS
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