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    JANSR2N7411 Search Results

    JANSR2N7411 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANSR2N7411 Fairchild Semiconductor 2.5A, -100V, 1.30 ?, Rad Hard, P-Channel Power MOSFET Original PDF
    JANSR2N7411 Intersil 2.5A, -100V, 1.30 ?, Rad Hard, P-Channel Power MOSFET Original PDF

    JANSR2N7411 Datasheets Context Search

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    sem 2105

    Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, sem 2105 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7411 FSL9110R4 -100V,

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9110R4 JANSR2N7411 -100V, MIL-STD-750, MIL-S-19500, 500ms;

    IC SEM 2105

    Abstract: No abstract text available
    Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSL9110R4 -100V, 1-30S2 JANSR2N7411 O-205AF 254mm) IC SEM 2105

    500V 25A Mosfet

    Abstract: Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V
    Text: RAD HARD MOSFET& JANS RAD HARD MOSFETs PAGE JANS Rad Hard Power MOSFET Selection Guide. 2-2 Rad Hard Data Packages - Harris Power Transistors.


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7292 JANSR2N7294 JANSR2N7395 JANSR2N7396 JANSR2N7397 JANSR2N7398 JANSR2N7399 500V 25A Mosfet Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V