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    JANSR2N7398 Search Results

    JANSR2N7398 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANSR2N7398 Fairchild Semiconductor 2A, 500V, 2.50 ?, Rad Hard, N-Channel Power MOSFET Original PDF
    JANSR2N7398 Intersil 2A, 500V, 2.50 ?, Rad Hard, N-Channel Power MOSFET (Formerly FSL430R4) Original PDF

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    JANSR2N7398

    Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7398 FSL430R4 JANSR2N7398 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 S E M I C O N D U C T O R August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7398 1-800-4-HARRIS

    2E12

    Abstract: 3E12 FSL430R4 JANSR2N7398
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7398 FSL430R4 2E12 3E12 FSL430R4 JANSR2N7398

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7398 FSL430R4

    E102h

    Abstract: No abstract text available
    Text: JANSR2N7398 S MAEESS August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF JANSR2N7398 1-800-4-HARRIS E102h

    43721

    Abstract: No abstract text available
    Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL430R4 JANSR2N7398 MIL-STD-750, MIL-S-19500, 500ms; 43721

    500V 25A Mosfet

    Abstract: Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V
    Text: RAD HARD MOSFET& JANS RAD HARD MOSFETs PAGE JANS Rad Hard Power MOSFET Selection Guide. 2-2 Rad Hard Data Packages - Harris Power Transistors.


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7292 JANSR2N7294 JANSR2N7395 JANSR2N7396 JANSR2N7397 JANSR2N7398 JANSR2N7399 500V 25A Mosfet Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V