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    FSS234 Price and Stock

    Rochester Electronics LLC FSS234-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey FSS234-TL-E Bulk 307
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    ITT Interconnect Solutions CIEF-SS-2-3-4

    - Bulk (Alt: CIEF-SS-2-3-4)
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    Avnet Americas CIEF-SS-2-3-4 Bulk 5
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    Newark CIEF-SS-2-3-4 Bulk 5
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    • 10 $141.24
    • 100 $119.58
    • 1000 $116.98
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    Master Electronics CIEF-SS-2-3-4
    • 1 $139.76
    • 10 $123.79
    • 100 $112.09
    • 1000 $112.09
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    SANYO Semiconductor Co Ltd FSS234-TL

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    Quest Components FSS234-TL 800
    • 1 $3.34
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    • 1000 $1.2525
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    onsemi FSS234-TL-E

    FSS234 - N-Channel 4V Drive Series '
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    Rochester Electronics FSS234-TL-E 9,000 1
    • 1 $0.9426
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    • 100 $0.886
    • 1000 $0.8012
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    FSS234 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSS234 Sanyo Semiconductor Original PDF
    FSS234D Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234D1 Fairchild Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS234D1 Fairchild Semiconductor 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234D1 Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234D3 Fairchild Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS234D3 Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R1 Fairchild Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS234R1 Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R3 Fairchild Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS234R3 Fairchild Semiconductor 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R3 Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R4 Fairchild Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS234R4 Fairchild Semiconductor 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R4 Intersil 6A, 250V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS234R4 Harris Semiconductor 6A, 250V, 0.600 Ohm, N-Channel Power MOSFET Scan PDF
    FSS234R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSS234 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
    Text: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS234D, FSS234R 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
    Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,


    Original     		PDF JANSR2N7401 FSS234R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234R4 JANSR2N7401

    S234

    Abstract: No abstract text available
    Text: FSS234 N- Channel MOS Silicon FET DC-DC Converter Use TENTATIVE Features and Applications • Very Low ON-state resistance. • 4V drive. • High Speed Switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS


    Original     		PDF FSS234 1200m FSS234 990804TM2fXHD S234

    1E14

    Abstract: 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm
    Text: JANSR2N7401 August 1998 Formerly FSS234R4 File Number 4571 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7401 FSS234R4 1E14 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7401 FSS234R4

    TA-2067

    Abstract: TA2067 s234 mosfet s234 FSS234
    Text: Ordering number : ENN6865 FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. 4.0V drive. Ultrahigh-speed switching. unit : mm 2116 [FSS234] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 1.27


    Original     		PDF ENN6865 FSS234 FSS234] TA-2067 TA2067 s234 mosfet s234 FSS234

    Rad hard MOSFETS in Harris

    Abstract: MIL-S-19500 1E14 2E12 FSS234D FSS234R fss234
    Text: S E M I C O N D U C T O R FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, rDS ON = 0.600Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSS234D, FSS234R 36MeV/mg/cm2 O-257AA 1-800-4-HARRIS Rad hard MOSFETS in Harris MIL-S-19500 1E14 2E12 FSS234D FSS234R fss234

    1E14

    Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
    Text: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS234D, FSS234R 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
    Text: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS234D, FSS234R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    FSL430

    Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
    Text: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080


    Original     		PDF O-205AF O-258AA FRL230, JANSR2N7275 FRL234, JANSR2N7278 FRE160, 2N7300 FRL130, FSL430 FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92

    NEC U574

    Abstract: u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062
    Text: 4 5 4 PCI RESET NC7S14 SC-70 5P 2 T12 RESUME RESET C632 U50 1 PRSTMSK0 2 4 1 19 1 3VDDS 5 4 3 3 PCIRST00 19,31,32,33,34,35,36,46 7 3 2 4 3 C 0.1uF 16V 80-20% 0402 Y5V U48A 1 NOT RESET AT SUSPEND 74LVX32MTCX FAIRCHILD


    Original     		PDF NC7S14 SC-70 PCIRST00 74LVX32MTCX AC97RST0 OT-23 AC97RSTNS0 1/16W DTA144EU NEC U574 u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062

    Untitled

    Abstract: No abstract text available
    Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­


    OCR Scan     		PDF FSS234D, FSS234R MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    FSS234

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V
    Text: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r


    OCR Scan     		PDF FSS234R4 1-800-4-HARRIS FSS234 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V

    sd 7401

    Abstract: T0257
    Text: JA N SR 2N 7401 É S 1 H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 5 0 V , rQg ONi = 0.600J2 has d evelo p ed a s e ries of R adiation H a rd e n e d M O S F E T s for com m ercial


    OCR Scan     		PDF FSS234R4 1-800-4-HARR sd 7401 T0257

    Untitled

    Abstract: No abstract text available
    Text: S hW S!» FSS234D, FSS234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Package • 6A, 250V, rDS ON = 0.600Q • Total Dose • Single Event TO-257AA - Meets Pre-Rad Specifications to 100K RAD (Si) - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSS234D, FSS234R 36MeV/mg/cm2 O-257AA 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSS234D, FSS234R Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 6A, 250V, ros ON = 0-600£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS234D, FSS234R -257AA MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7401 f ü H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET File Number 4571 Features • 6A, 250V, ro g o i\| = 0.600Q T he D iscrete P roducts O peration of H arris S e m icon ducto r


    OCR Scan     		PDF JANSR2N7401 FSS234R4 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: h a r S E M I C O N D U C T O R FSS234D, FSS234R " M J m a m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 6A, 250V, Tqs^on = 0.600£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD Si)


    OCR Scan     		PDF FSS234D, FSS234R O-257AA 36MeV/mg/cm2 1-800-4-HARRIS

    B402-6

    Abstract: No abstract text available
    Text: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080


    OCR Scan     		PDF O-205AF O-258AA FRE160, 2N7300 FRE260, 2N7302 FRE264, 2N7304 FRE460, 2N7306 B402-6

    MOSFETS

    Abstract: Power MOSFETs
    Text: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.


    OCR Scan     		PDF FSL110D, FSL110R FSL130D, FSL130R FSL230D, FSL230R FSL234D, FSL234R FSL430D, FSL430R MOSFETS Power MOSFETs

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264