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onsemi HGTG40N60A4 IGBT 600V 75A TO247-3
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DigiKey	HGTG40N60A4	Tube			450	1 - 10 - 100 - 1000 $6.10727 10000 $6.10727	Buy Now
	HGTG40N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	HGTG40N60A4	Bulk			450	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	HGTG40N60A4		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	HGTG40N60A4		90		1	1 - 10 - 100 $7.44 1000 $7.44 10000 $7.44	Buy Now
onsemi HGTG40N60B3 IGBT 600V 70A 290W TO247
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DigiKey	HGTG40N60B3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	HGTG40N60B3	Tube			450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	HGTG40N60B3	Bulk			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ameya Holding Limited	HGTG40N60B3		1,146			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGTG40N60C3 75A, 600V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG40N60C3	Bulk			50	1 - 10 - 100 $6.07 1000 $6.07 10000 $6.07	Buy Now
Rochester Electronics LLC HGTG40N60C3R 75A, 600V N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG40N60C3R	Bulk			45	1 - 10 - 100 $8.38 1000 $8.38 10000 $8.38	Buy Now
onsemi SHGTG40N60A4 SHGTG40N60A4
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DigiKey	SHGTG40N60A4	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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G40N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G40N60 Abstract: G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812 Text: TO-3PF Tube Packing Data TO-3PF Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: F G40N60UF 113 Bubble Sheet 12 Tubes per box TO-3PF parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in	Original	G40N60UF 570x150x48 590x330x245 KA7812-AE IMSYS777 A710103105 G40N60 G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812	PDF
40n60c3 Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26 Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E	Original	G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26	PDF
G40N60 Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3 Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3	PDF
G40N60B3 Abstract: No abstract text available Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3	PDF
G40N60 Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 Text: G40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678	PDF
G40N60 Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389 Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389	PDF
G40N60 Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n Text: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n	PDF
HGTG40N60B3 equivalent Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6 Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6	PDF
G40N60 Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060 Text: G40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060	PDF
G40N60 Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b Text: G40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b	PDF
G40N60 Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH Text: G40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating	Original	HGTG40N60B3 O-247 160ns 150oC HGTG40N60B3 150oC. G40N60 g40n60b3 g40n60b g40n60b3 igbt TA49052 LD26 RHRP3060 45UH	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
g40n60b3d Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063 Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063	PDF
G40N60B3 Abstract: G40N60 Text: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	Original	HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60	PDF

G40N60 Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273 Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273	PDF
G40N60 Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b	PDF
G40N60 Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt	PDF
G40N60 Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052 Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	OCR Scan	HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052	PDF
G40N60 Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI Text: in t e G40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	OCR Scan	HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI	PDF

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onsemi HGTG40N60A4

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Rochester Electronics LLC HGTG40N60C3

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G40N6 Datasheets Context Search

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40n60c3

G40N60

G40N60B3

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G40N60

G40N60

HGTG40N60B3 equivalent

G40N60

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G40N60

65e9 transistor

g40n60b3d

G40N60B3

G40N60

G40N60

G40N60

G40N60

G40N60