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    K442

    Abstract: BUK442-100A BUK442-100B
    Text: N AMER PHI LIPS/DISCRETE t.TE D bbS3T31 GD3DS10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		bbS3T31 0D3G510 K442-1OOA/B OT186 EUK442 -100A K442 BUK442-100A BUK442-100B PDF