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    BUK442-100A

    Abstract: BUK442-100B
    Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		K442-1OOA/B EUK442 -100A OT186 BUK442-100A BUK442-100B PDF

    K442

    Abstract: BUK442-100A BUK442-100B
    Text: N AMER PHI LIPS/DISCRETE t.TE D bbS3T31 GD3DS10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		bbS3T31 0D3G510 K442-1OOA/B OT186 EUK442 -100A K442 BUK442-100A BUK442-100B PDF

    EUK442

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK442-100A/B EUK442 -100A -100B PDF