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    GEO06645

    Abstract: GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54 mm 1.8 1.2 9.0 8.2 0.6 0.4 GEO06645 Chip position Area not flat 29.5 27.5 Cathode Diode


    Original     		fexf6626 GEO06645 fex06630 GEX06630 OHR01553 OHR00860 GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 PDF

    transistor 415

    Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0


    Original     		fexf6626 GEO06645 GEX06630 fex06630 OHR01553 OHR00860 transistor 415 GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61 PDF

    GEO06645

    Abstract: GEX06239 LD271 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833 Q62703-Q838 LD271 APPLICATIONS LD271 IR LED
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239


    Original     		fex06628 GEX06239 GEO06645 OHR01041 OHR00257 OHR01879 GEO06645 GEX06239 LD271 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833 Q62703-Q838 LD271 APPLICATIONS LD271 IR LED PDF

    LD271 IR LED

    Abstract: LD271 LD271 remote control IR LD271 GEO06645 GEX06239 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239


    Original     		fex06628 GEX06239 GEO06645 Ho271 OHR01041 OHR00257 OHR01879 LD271 IR LED LD271 LD271 remote control IR LD271 GEO06645 GEX06239 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833 PDF

    OPTO LD 271 H

    Abstract: ir 271
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271 LD 271 H LD 271 L LD 271 HL Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 300, SFH 203


    Original     		GEX06239 GEO06645 OPTO LD 271 H ir 271 PDF

    LD271 IR LED

    Abstract: data sheet ld 271 OPTO LD 271 H LD271 APPLICATIONS LD271 remote control infrared remote switch IR LD271 ld 1.8 ld 18 LD271
    Text: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 1.0 0.7 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 1.3 1.0 2.54 mm spacing


    Original     		fex06628 GEX06239 GEO06645 OHR01041 OHR00257 OHR01879 LD271 IR LED data sheet ld 271 OPTO LD 271 H LD271 APPLICATIONS LD271 remote control infrared remote switch IR LD271 ld 1.8 ld 18 LD271 PDF

    4534

    Abstract: No abstract text available
    Text: High Power VCSEL-Laserdiode 920 nm im 5 mm Radial-Gehäuse High-Power VCSEL Laser Diode (920 nm) in 5 mm Radial Package SFH 4532 SFH 4534 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarotsendediode in VCSEL-(Vertical Cavity


    Original     		OHF00894 OHF00895 GEO06645 4534 PDF

    GEO06645

    Abstract: Q62702-P955 Q62702-P956 SFH203
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei 880 nm (SFH 203 FA)


    Original     		OHR00883 OHF01026 GEO06645 GEO06645 Q62702-P955 Q62702-P956 SFH203 PDF

    transistor 415

    Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


    Original     		stea01-01 GEO06645 GEX06630 transistor 415 MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960 PDF