GEX06306
Abstract: Q62703-Q516
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 5.9 5.5 ø5.1 ø4.8 5.0 4.2 0.6 0.4 0.6 0.4 1.0 0.5 Chip position 29 27 fex06306 GEX06306 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fex06306
GEX06306
OHR00949
OHR01893
GEX06306
Q62703-Q516
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GEX06306
Abstract: Q62703-Q516 OHR01893
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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PDF
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GEX06306
fex06306
OHR00949
OHR01893
GEX06306
Q62703-Q516
OHR01893
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GEX06306
Abstract: Q62703-Q516
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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PDF
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GEX06306
fex06306
OHR00949
OHR01893
GEX06306
Q62703-Q516
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GEX06306
Abstract: Q62703-Q516
Text: GaAlAs-IR-Lumineszenzdiode 880 nm GaAlAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gegurtet lieferbar (im Ammo-Pack)
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Original
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PDF
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OHR01893
GEX06306
GEX06306
Q62703-Q516
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GEX06306
Abstract: No abstract text available
Text: GaAIAs Infrared Emitter Dimensions in inches mm Surface not flat .024 (0 . 6 ) .016 (0 . 4) .100 (2 .54 ) .047(1 GEX06306 FEATURES • GaAIAs IR emitter made a liquid phase epitaxy process • Small tolerance: Chip surface to case surface • Good spectral match to silicon
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OCR Scan
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PDF
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GEX06306
SFH203P
OHB00686
lE/lE100mA
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