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    Toshiba America Electronic Components GT15Q102

    Trans IGBT Chip N-CH 1.2KV 15A 3-Pin(3+Tab) TO-3PN - Rail/Tube (Alt: GT15Q102)
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    GT15Q Datasheets (21)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    GT15Q101 Toshiba Discrete IGBTs Original PDF
    GT15Q101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT15Q101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT15Q101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT15Q101 Toshiba Insulated Gate Bipolar Transistor - Silicon N-Channel IGBT Scan PDF
    GT15Q101 Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF
    GT15Q101 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    GT15Q102 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT15Q102 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT15Q102 Toshiba Original PDF
    GT15Q102 Toshiba Discrete IGBTs Original PDF
    GT15Q102 Toshiba Discrete IGBTs Original PDF
    GT15Q301 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT15Q301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT15Q301 Toshiba Discrete IGBTs Original PDF
    GT15Q301 Toshiba Discrete IGBTs Original PDF
    GT15Q301 Toshiba IGBT Chip, N Channel, 1200V, 2-16C1C, 3-Pin Scan PDF
    GT15Q311 Toshiba Discrete IGBTs Original PDF
    GT15Q311 Toshiba Discrete IGBTs Original PDF
    GT15Q311 Toshiba SILICON N CHANNEL IGBT Scan PDF

    GT15Q Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    GT15Q101

    Abstract: No abstract text available
    Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL


    OCR Scan     		GT15Q101 2-16C1C GT15Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)


    OCR Scan     		GT15Q311 --100A PDF

    GT15Q301

    Abstract: No abstract text available
    Text: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiT iin ? n i HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 /¿s Max. Low Saturation Voltage : V q e (sat) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 PDF

    GT15Q301

    Abstract: No abstract text available
    Text: TO SH IBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q301 GT15Q301 PDF

    VF50

    Abstract: No abstract text available
    Text: GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q311 2-16H1A VF50 PDF

    GT15Q301

    Abstract: No abstract text available
    Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.32 s Max. z Low saturation voltage


    Original     		GT15Q301 GT15Q301 PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)


    Original     		GT15Q102 2-16C1C 2002-01-18transportation GT15Q102 GT15Q301 PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 2-16C1C GT15Q102 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/.iS Max. Low Saturation Voltage : V q e (sat) = 3.5V (Max.)


    OCR Scan     		GT15Q301 --100A PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 2-16C1C GT15Q102 GT15Q301 PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 000707EAA1 GT15Q102 GT15Q301 PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 2-16C1C GT15Q102 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT15Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 15.9MAX ¿3.2 ±0.2 -y - M O TO R CONTROL APPLICATIONS High Input Impedance


    OCR Scan     		GT15Q101 PDF

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js PDF

    GT15Q301

    Abstract: No abstract text available
    Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.32 µs Max. l Low Saturation Voltage


    Original     		GT15Q301 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.32 µs Max. Low Saturation Voltage : VCE (sat) = 2.7 V (Max.)


    Original     		GT15Q301 PDF

    GT15Q311

    Abstract: No abstract text available
    Text: TO SH IBA GT15Q311 G T 150 311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS -4 - .1.5 The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)


    OCR Scan     		GT15Q311 GT15Q311 PDF

    TF032

    Abstract: GT15Q301
    Text: GT15Q301 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT15Q301 ○ 大電力スイッチング用 単位: mm ○ モータドライブ用 z 第 3 世代品です。 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		GT15Q301 2-16C1C TF032 GT15Q301 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 2-16C1C PDF

    GT15Q102

    Abstract: GT15Q301
    Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		GT15Q102 GT15Q102 GT15Q301 PDF

    MG50Q6es41

    Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
    Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752


    OCR Scan     		GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT15Q101 T O SH iBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANNEL I6BT G T 1 5 Q 1 01 HIGH POW ER SW ITCHING APPLICATIO N S U n it in nun M O T O R CONTRO L APPLICATIONS • • • • High Input Impedance High Speed : tf—0.5jus Max.


    OCR Scan     		GT15Q101 2-16C1C PDF

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: No abstract text available
    Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.32 µs Max. z Low saturation voltage


    Original     		GT15Q301 TOSHIBA Semiconductor Reliability Handbook PDF