Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)
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GT25G101
2-10S1C
GT25G101
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Untitled
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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GT25G101
2-10S1C
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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gt25g101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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GT25G101
2-10S1C
GT25G101
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GT25G101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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Untitled
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)
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GT25G101
2-10S1C
000707EAA2
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Untitled
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)
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GT25G101
10S1C
000707EAA2
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)
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GT25G101
2-10S1C
GT25G101
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 01 ( S M ) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 170A) Enhancement-Mode 12V Gate Drive
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GT25G101
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Untitled
Abstract: No abstract text available
Text: GT25G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASH APPLICATIONS SILICON N-CHANNEL IGBT G T 2 5 G 1 01 Unit in mm High Input Impedance Low Saturation Voltage : V qe sat = 8V (Max.) (Iq = 170A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
VCM-330V
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT25G101 T O S H IB A IN S U L A T E D G ATE B IP O LA R T R AN SISTO R SILICO N N -C H A N N E L IGBT Unit in mm STROBE FLASH A P P L IC A T IO N S 1 0 .3 M A X • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 170A)
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GT25G101
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL MOS TYPE GT25G101 STROBE FLASH APPLICATIONS Unit in ran 10.3MAX . High Input Impedance 1.32 5Ï IB . Low Saturation Voltage : VcE sat *8V(riax.) (Ic=170A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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GT25G101
2-10S1C
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WE VQE 24 E
Abstract: FS25
Text: T O S H IB A GT25G101 SM T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT G T25G 10 1 (SM) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 170A)
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GT25G101
GT25G101
2-10S2C
TcS70Â
RGS51Ã
WE VQE 24 E
FS25
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Untitled
Abstract: No abstract text available
Text: GT25G101 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASH APPLICATIONS • • • • SILICON N-CHANNEL IGBT G T 2 5 G 1 01 Unit in mm High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 170A) Enhancement-Mode
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GT25G101
-330V
TcS70Â
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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