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Untitled Abstract: No abstract text available Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical	Original	PDF	H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M
H11F1M Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical	Original	PDF	H11F1M, H11F2M, H11F3M E90700) H11FXM H11F1M H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers
H11f1 variable resistor 500k Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical	Original	PDF	H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM
H11f1 variable resistor 500k Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3 Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical	Original	PDF	H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
h11f1m Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical	Original	PDF	H11F1M, H11F2M, H11F3M H11FXM H11F3M h11f1m Fairchild H11FxM H11FX H11F2M H74A1 H11F1SVM