harris 6616
Abstract: No abstract text available
Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2
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1x106
1x1014c
1x109
1x101
24-Lead
HC6616/1
HC6616/2
harris 6616
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harris 6616
Abstract: No abstract text available
Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02
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OCR Scan
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HC6616
1x106
1x109
1x101
24-Lead
HC6616/1
pin21
HC6616/2
harris 6616
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AAF40
Abstract: atechnology
Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through
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OCR Scan
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00QGM37
HC6616
1x10i4cnr2
1x109
0x10-9
1x1012rad
AAF40
atechnology
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harris 6616
Abstract: No abstract text available
Text: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through
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HC6616
1x106
1x1014cm
1x109
harris 6616
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