28F101

Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32 0625E-1
Contextual Info: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is

Contextual Info: 1 20 August, 2013 Agenda  Motivation: Environmental and health endangerment of lead.  Situation: Lead & the use in Electronics  Status on legislation  DA5 Structure and Project:    2 Cooperations and partners Requirements, Applications and Approaches for possible solutions

AAF40

Abstract: atechnology
Contextual Info: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through

P50N05E

Abstract: dc-dc converter royer PE-65050 p50n05 figure 19 hysteresis loop of magnetic core in flyback circuit 2n3507 1amp IRFZ44 mosfet for square wave inverter pe-6197 diode r 4kl c 46 PE-65066
Contextual Info: L ir m Application Note 29 O ctober 1988 TECHNOLOGY Some Thoughts on DC-DC Converters Jim Williams Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven cir­ cuitry is an obvious candidate. The 6V or 12V cell in a lap­