ATECHNOLOGY Search Results
ATECHNOLOGY Datasheets Context Search
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28F101Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE |
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28F101 PDIP32 PLCC32 TSOP32 M28F101 28F101 | |
M28F101
Abstract: PDIP32 PLCC32 TSOP32 0625E-1
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M28F101 PDIP32 PLCC32 TSOP32 M28F101 TSOP32 PDIP32 PLCC32 0625E-1 | |
Contextual Info: 1 20 August, 2013 Agenda Motivation: Environmental and health endangerment of lead. Situation: Lead & the use in Electronics Status on legislation DA5 Structure and Project: 2 Cooperations and partners Requirements, Applications and Approaches for possible solutions |
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AAF40
Abstract: atechnology
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00QGM37 HC6616 1x10i4cnr2 1x109 0x10-9 1x1012rad AAF40 atechnology | |
P50N05E
Abstract: dc-dc converter royer PE-65050 p50n05 figure 19 hysteresis loop of magnetic core in flyback circuit 2n3507 1amp IRFZ44 mosfet for square wave inverter pe-6197 diode r 4kl c 46 PE-65066
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California92112 P50N05E dc-dc converter royer PE-65050 p50n05 figure 19 hysteresis loop of magnetic core in flyback circuit 2n3507 1amp IRFZ44 mosfet for square wave inverter pe-6197 diode r 4kl c 46 PE-65066 |