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    HGTD7N60B3S9A Search Results

    HGTD7N60B3S9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTD7N60B3S9A Fairchild Semiconductor 14A, 600V, UFS N-Channel IGBT Original PDF

    HGTD7N60B3S9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 G7N60 Igbts guide TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2002 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S 150oC. HGTP7N60B3 G7N60B3 G7N60B HGTD7N60B3S HGTD7N60B3S9A RHRD660 G7N60 Igbts guide TA49190 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3 HGT1S7N60B3S HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 Semiconductor 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 G7N60B HGT1S7N60B3 HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    g7n60b3

    Abstract: g7N60B G7N60
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190 PDF

    g7n60b3

    Abstract: g7N60B G7N60 C110 HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 in t e r r ii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 C110 HGTD7N60B3S HGTD7N60B3S9A PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HADDIQ S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 25°C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 PDF

    G7N60B3

    Abstract: g7N60B EM- 546 motor
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HARRIS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 g7N60B EM- 546 motor PDF