ma 6116 f5
Abstract: HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b
Text: HM-65162/883 TM 2kx8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced
|
Original
|
HM-65162/883
MIL-STD883
HM-65162/883
ma 6116 f5
HM4-65162/883
65162b
F24.6 Package
HM1-65162C/883
FN3001
2kx8 2716
65162
hm65162b
|
PDF
|
8403602JA
Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V
|
Original
|
HM-65162
70/90ns
HM-65162
8403602JA
8403606JA
29104BJA
29110BJA
8403606ZA
HM1-65162-9
HM1-65162B-9
HM4-65162-9
HM4-65162B-9
|
PDF
|
ma 6116 f5
Abstract: ma 6116 f6 HM1-65162/883
Text: HM-65162/883 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced
|
Original
|
HM-65162/883
MIL-STD883
HM-65162/883
ma 6116 f5
ma 6116 f6
HM1-65162/883
|
PDF
|
F24.6 Package
Abstract: HM1-65162 HM1-65162C/883 6116 static ram 65162
Text: HM-65162/883 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
|
Original
|
HM-65162/883
MIL-STD883
HM-65162/883
100kHz
F24.6 Package
HM1-65162
HM1-65162C/883
6116 static ram
65162
|
PDF
|
8403602JA
Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Text: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V
|
Original
|
HM-65162
70/90ns
HM-65162
8403602JA
8403606JA
29104BJA
29110BJA
8403606ZA
HM1-65162-9
HM1-65162B-9
HM4-65162-9
HM4-65162B-9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 2048 x 8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65162 AND HM65162B ESA/SCC Detail Specification No. 9301/015
|
OCR Scan
|
HM65162
HM65162B
17VIL.
|
PDF
|
hm65162c-5
Abstract: No abstract text available
Text: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C
|
OCR Scan
|
selec62
65162/Rev
hm65162c-5
|
PDF
|
M65162
Abstract: t29 55v
Text: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
|
OCR Scan
|
HM-65162/883
HM-65162/883
100kHz
M65162
t29 55v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)
|
OCR Scan
|
F12-TM
65162/Rev
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4bE D HARRIS SEMICON» SECTOR ÌH H U S E M I C O N D U C T O R U A R R IS • 43Q2271 0D3T1SG T W H A S H M - 6 5 1 6 2 'T -4 U j-Z .'5 - | 2 . . 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • Fast Access T im e. . 7<V90nsMax
|
OCR Scan
|
43Q2271
V90nsMax
HM-65162
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 } H M - 6 5 1 2 / 8 8 3 2K x 8 Asynchronous CMOS Static RAM August 1996 Features • 6 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. T h e H M -6 5 1 6 2 /8 8 3 is a C M O S 2 0 4 8 x 8 Static Random
|
OCR Scan
|
MIL-STD883
70/90ns
00bfi34b
HM-65162/883
43DEE71
00bfl3M?
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H A R R M3DS271 GÜBTIS? 2 4bE ì> HARRIS SEMICOND SECTOR I S H M - 6 5 1 6 2 / 8 8 3 SEMICONDUCTOR 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of
|
OCR Scan
|
M3DS271
Mil-Std-883
HM-65162/883
43D2271
HM-65162/883
T-46-23-12
MIL-STD-1835,
GDIP1-T24
MIL-M38510
|
PDF
|
74c920
Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's
|
OCR Scan
|
|
PDF
|
8403602JA
Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
Text: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max
|
OCR Scan
|
HM-65162
70/90ns
HM-65162
T777777777A
8403602JA
8403606JA
chip diagram of ram chip 6116
29104BJA
29110BJA
8403603JA
a651
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.
|
OCR Scan
|
HM-65162
55/70/90ns
20/yA
|
PDF
|
hm 6164
Abstract: 65162 hm165162 harris HM1-65162 equivalent
Text: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
|
OCR Scan
|
HM-65162/883
MIL-M38510
MIL-STD-1835,
GD1P1-T24
CQCC1-N32
hm 6164
65162
hm165162 harris
HM1-65162 equivalent
|
PDF
|
HM1-65162
Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V
|
OCR Scan
|
HM-65162
HM-65162
HM1-65162
HM165162883
hm165162 harris
HM1-65162B-9
hm4 SMD
hm465162c
8403603JA
8403602JA
8403606JA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TS D É 4302271 0010714 b | T-4 6 -2 3 -12 HARRIS H M - 6 5 1 6 2 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts D IP • Fast Access Tim e. 55/70/90ns Max. T O P VIEW
|
OCR Scan
|
M302271
T-46-23-12
HM-65162
55/70/90ns
50/iA
20/uA
-550C
TAVWH1221-
|
PDF
|
8403602JA
Abstract: 8403606JA
Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max
|
OCR Scan
|
HM-65162
HM-65162
8403602JA
8403606JA
|
PDF
|
triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
|
OCR Scan
|
|
PDF
|
65162C
Abstract: 8403602JA 8403606JA
Text: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V
|
OCR Scan
|
HM-65162
65162C
8403602JA
8403606JA
|
PDF
|
HM6116LP-3
Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2
Text: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2
|
OCR Scan
|
HM6116FP-2
HM6116FP-3
HM6116FP-4
HM6116L-2
HM65728N-2
HM65728N-5
HY61C16-45
HY61C16-55
IIY61C16-70
HY61C16A-25
HM6116LP-3
HM6116LP-4
upd446
HM6116LP-2
Hitachi Scans-001
HM6116L-5
HM6116LP HM6116LP-2 HM6116LP-3
hm65161
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM-65162/883 & W A « 2K x 8 Asynchronous CMOS St3tÌC RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
|
OCR Scan
|
HM-65162/883
Mil-Std-883
HM-65162/883
MIL-M38510
MIL-STD-1835,
GDIP1-T24
CQCC1-N32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM-65162/883 S 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
|
OCR Scan
|
HM-65162/883
MIL-STD883
HM-65162/883
|
PDF
|