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    HN2D01FU Price and Stock

    Toshiba America Electronic Components HN2D01FU(TE85L,F)

    DIODE ARRAY GP 80V 80MA US6
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    DigiKey HN2D01FU(TE85L,F) Cut Tape 1
    • 1 $0.51
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    Quest Components HN2D01FU(TE85L,F) 2,276
    • 1 $0.815
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    • 100 $0.815
    • 1000 $0.326
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    EBV Elektronik HN2D01FU(TE85L,F) 13 Weeks 3,000
    • 1 -
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    Toshiba America Electronic Components HN2D01FU,LF

    Diodes - General Purpose, Power, Switching
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    Mouser Electronics HN2D01FU,LF 1,848
    • 1 $0.37
    • 10 $0.282
    • 100 $0.17
    • 1000 $0.111
    • 10000 $0.083
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    Toshiba America Electronic Components HN2D01FU

    0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HN2D01FU 2,864
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $1.5
    • 10000 $0.525
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    Win Source Electronics HN2D01FU 241,000
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    • 1000 $0.116
    • 10000 $0.095
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    Toshiba America Electronic Components HN2D01FU,LF(B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HN2D01FU,LF(B 2,320
    • 1 $0.76
    • 10 $0.76
    • 100 $0.76
    • 1000 $0.228
    • 10000 $0.152
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    Toshiba America Electronic Components HN2D01FU,LF(T

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip One Stop HN2D01FU,LF(T Cut Tape 2,069
    • 1 -
    • 10 $0.258
    • 100 $0.126
    • 1000 $0.0937
    • 10000 $0.0876
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    HN2D01FU Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2D01FU Toshiba HN2D01 - DIODE 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE, 1-2T1C, 6 PIN, Signal Diode Original PDF
    HN2D01FU Toshiba Diode, Ultra High Speed Switching Application Original PDF
    HN2D01FU Toshiba Japanese - Diodes Original PDF
    HN2D01FU Toshiba Diodes Original PDF
    HN2D01FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN2D01FU Toshiba DIODE Scan PDF
    HN2D01FU Toshiba Ultra High Speed Silicon Epitaxial Planar Type Diode Scan PDF
    HN2D01FU(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V US6 Original PDF

    HN2D01FU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子 パッケージに 3 素子を内臓しています。 順方向特性が良い。


    Original     		HN2D01FU 100mA HN2D01FU PDF

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN2D01FU HN2D01FU 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		HN2D01FU HN2D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		HN2D01FU HN2D01FU 100mA PDF

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		HN2D01FU HN2D01FU PDF

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application z HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		HN2D01FU HN2D01FU PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    ISL9504

    Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
    Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		03/19/m 100-ohm 95-ohms ISL10 ISL11 ISL9504 j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.


    OCR Scan     		HN2D01FU HN2D01FU 100mA if--H05 01/iF PDF

    HN2D01FU

    Abstract: HN2D01 1q31
    Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ.


    OCR Scan     		HN2D01 HN2D01FU HN2D01FU 1q31 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •


    OCR Scan     		HN2D01 HN2D01FU PDF

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


    OCR Scan     		HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . Unit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • F ast Reverse Recovery Time : tr r = 1.6ns Typ.


    OCR Scan     		HN2D01 HN2D01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.


    OCR Scan     		HN2D01FU HN2D01FU 01//F PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN PDF

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B PDF