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    HY51V Price and Stock

    SK Hynix Inc HY51V18164CJC-60

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    Bristol Electronics HY51V18164CJC-60 297
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    SK Hynix Inc HY51V17804CJ-60

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    Bristol Electronics HY51V17804CJ-60 242
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    Quest Components HY51V17804CJ-60 855
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    HY51V17804CJ-60 220
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    SK Hynix Inc HY51V65164ATC-60

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    Bristol Electronics HY51V65164ATC-60 2
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    SK Hynix Inc HY51V18164CJC-60DR

    Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ (Also Known As: HY51V18164CJC-60)
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    Quest Components HY51V18164CJC-60DR 1,000
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    HY51V18164CJC-60DR 1,000
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
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    SK Hynix Inc HY51V65803HGT-6

    8M X 8 EDO DRAM, 60 ns, PDSO32
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    Quest Components HY51V65803HGT-6 115
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    HY51V Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51V16160BJC Hynix Semiconductor 1Mx16, Fast Page mode Original PDF
    HY51V16404BJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BJ80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BR80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLJ80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLR80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BSLT80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V16404BT80 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY51V17400C Hyundai 4Mx4, Fast Page mode Original PDF

    HY51V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 64403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(8K ref ) and power consumption


    Original     		PDF HY51V 64403HG/HGL 64Mbit 400mil 32pin

    HY51VS

    Abstract: No abstract text available
    Text: HY51V S 16160HG/HGL 1M x 16Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high


    Original     		PDF HY51V 16160HG/HGL 16Bit 16160HG/HGL 16bit. HY51VS

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal


    Original     		PDF HY51V 65163HG/HGL 16Bit 64Mbit 100us. 400mil 50pin

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 16163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be


    Original     		PDF HY51V 16163HG/HGL 16Bit 16163HG/HGL 16bit.

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The


    Original     		PDF HY51V64400HG 64Mbit 400mil 32pin

    HY51V65164

    Abstract: No abstract text available
    Text: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V64164 HY51V65164 4Mx16, 16-bit 4Mx16 HY51V65164

    HY51V16160BJC

    Abstract: No abstract text available
    Text: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V18160B HY51V16160B 1Mx16, 16-bit 1Mx16 HY51V16160BJC

    HY51V17800B

    Abstract: HY51V17800C
    Text: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V17800C HY51V16800C HY51V17800B

    16mx4

    Abstract: HY51V64400A
    Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


    Original     		PDF HY51V64400A HY51V65400A 16Mx4, 128ms cycle/64ms) 16Mx4 10/Sep

    Untitled

    Abstract: No abstract text available
    Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


    Original     		PDF HY51V64800A HY51V65800A 128ms cycle/64ms) 12/Sep

    HY51V17404C

    Abstract: No abstract text available
    Text: HY51V17404C,HY51V16404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V17404C HY51V16404C

    16mx4

    Abstract: HY51V65404A HY51V64404A
    Text: HY51V64404A,HY51V65404A 16Mx4, Extended Data Out mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V64404A HY51V65404A 16Mx4, 128ms cycle/64ms) 16Mx4 10/Sep HY51V65404A

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF V17410Ais HY51V17410A HY51V1741 D36-00-MAY94 4b75Q HY51V17410A HY51V17410AJ HY51V17410ASLJ HY51V17410AT HY51V1741OASLT

    Untitled

    Abstract: No abstract text available
    Text: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400A 1AD35-00-MAY95 HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400B HY51V16400B 1A047-00-MAY95 HY51V16400BJ HY51V16400BSL HY51V16400BT HY51V16400BSLT

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver


    OCR Scan     		PDF 72-bit HYM5V72A120A HY51V4400B HY51V18160B 16-bit HYM5V72A120AXG/ASLXG/ATXG/ASLTXG 1EC07-10-AUG95

    HYM5V64414A

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17404A in 24 26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 mF and 0.01 nF


    OCR Scan     		PDF HYM5V64414A 64-bit HY51V17404A 5V64414AKGATKGASLK A0-A10) DQ0-DQ63) 1CE16-10-APR95

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400HG 1SMx4,3.3V, 8K Ref, FP DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The advanced circuit and process allow this device to achieve high performance and low power dissipation,


    OCR Scan     		PDF HY51V64400HG 64Mbit 16Mx4, 400mil 32pin

    Untitled

    Abstract: No abstract text available
    Text: HY51V65173HGJ T -6E 4Mxie, 3.3V, 4K Ret, EDO, ET DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera­


    OCR Scan     		PDF HY51V65173HGJ 64Mbit 16bit 100us. 4MX16, 400mil 50pin 64M-bit