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    HY51V17800B

    Abstract: SL Power Electronics OR Condor HY51V17800BJ
    Text: HY51V17800B,HY51V16800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V17800B HY51V16800B SL Power Electronics OR Condor HY51V17800BJ

    HY51V17800B

    Abstract: HY51V17800C
    Text: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V17800C HY51V16800C HY51V17800B

    HY51V17800B

    Abstract: HY51V17800C
    Text: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V17800C HY51V16800C 10/Sep HY51V17800B

    HY51V17800B

    Abstract: HY51V17800C self powered time counter
    Text: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V17800C HY51V16800C HY51V17800B self powered time counter

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V17800B,HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode C M O S D RAM s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V17800B V16800B

    Untitled

    Abstract: No abstract text available
    Text: •'H Y U N D A I HY51V17800B, HY51V16800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		PDF HY51V17800B, HY51V16800B HY51V17800BJ HY51V17800BSLJ HY51V17800BT HY51V17800BSLT HY51V16800BJ HY51V16800BSLJ HY51V16800BT HY51V16800BSLT

    Untitled

    Abstract: No abstract text available
    Text: •'HYUNDAI HY51V17800B,HY5l V I6800B 2Mx8, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V17800B I6800B A0-A11)

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		PDF 256Kx4-bit, 1MX16BIT 16MX1

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


    OCR Scan     		PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    Untitled

    Abstract: No abstract text available
    Text: • HY51V17800C,HY51 V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V17800C V16800C A0-A11)

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


    OCR Scan     		PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


    OCR Scan     		PDF 32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ