HY51V17800B
Abstract: SL Power Electronics OR Condor HY51V17800BJ
Text: HY51V17800B,HY51V16800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17800B
HY51V16800B
SL Power Electronics OR Condor
HY51V17800BJ
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V17800B,HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode C M O S D RAM s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17800B
V16800B
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Untitled
Abstract: No abstract text available
Text: •'H Y U N D A I HY51V17800B, HY51V16800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the sam e row.
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HY51V17800B,
HY51V16800B
HY51V17800BJ
HY51V17800BSLJ
HY51V17800BT
HY51V17800BSLT
HY51V16800BJ
HY51V16800BSLJ
HY51V16800BT
HY51V16800BSLT
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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Untitled
Abstract: No abstract text available
Text: •'HYUNDAI HY51V17800B,HY5l V I6800B 2Mx8, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17800B
I6800B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16
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32814A
32810A
536A804AM
HYM536A814AM
36810A
HY5117404AJ/AT
HY5117400AJ/AT
HY5116404AJ
HY5117404AJ
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