Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
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Untitled
Abstract: No abstract text available
Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000B
HY514400A
22//F
HYM581000BM/BLM
1BB05-00-MAY93
4b750fifi
4b75Dflfl
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000B
HY514400A
HYM581000BM/BLM
1BB0fr40-M
1BB05-00-M
1BB05-00-MAY93
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22/iF
HYM581000CM/CLM
1BB07-10-M
G0Q174S
DDQ17M3
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22fiF
HYM581000CM/CLM
1BB07-10-M
1BB07-10-MAY93
1BB07-1
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Untitled
Abstract: No abstract text available
Text: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000B
HY514400A
HYM581000BM/BLM
11-OmW
1BB05-01-FEB94
4b75D6Ã
GDD32bÃ
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PDF
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CRL4
Abstract: s8100
Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10
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OCR Scan
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G0003flfl
M431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000-60
S81000-70
YM581000-80
36l--
CRL4
s8100
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HYM581000M
Abstract: No abstract text available
Text: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight
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OCR Scan
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Mb750flß
HYM581000
M431201B-OCT91
HYM581000M
HY531000J
22fiF
7777777r/
4b75Dfl
HYM581000
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U351
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000A Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. Q.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000A
HY514400
22fiF
HYM581000AM
1BB03-20-MAY93
1BB03-20-MAYS3
U351
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HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
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OCR Scan
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HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
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PDF
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HY531000
Abstract: HYM581000 GO2S
Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2fyF decoupling capacitor is mounted fo r each DRAM.
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OCR Scan
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HYM581000
HY531000
HYM581000M
1BB01-11-M
1BB01
-11-MAY93
1BB01
GO2S
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000
HY531000
HYM581000M
1BB01-11-MAY93
4L750afl
HYM581000M
1BB01-11-M
HYM581000A
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Untitled
Abstract: No abstract text available
Text: « }J • ■ ^ ,c uo ,ndudctao Ì SEMICONDUCTOR H Y im 5 8 1 0 0 0 M x8 -K t c m o s d r a m m o d u l e M431201B-APR91 DESCRIPTION The HYM581000 is a 1M words by 8 bits dy namic RAM module and consists of eight HY531000J Fast Page mode CM OS DRAM in 20/26 pin SOJ package m ounted on a 30 pin
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OCR Scan
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431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000
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PDF
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HYM591000AM
Abstract: bb04 HY531000
Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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OCR Scan
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HYM591000A
HY514400
HY531000
HYM591000AM
tWCHf31)
BB04-20-M
04-20-M
bb04
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