UPD4264405
Abstract: No abstract text available
Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >iPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD4264405
uPD4265405
iPD4264405
/iPD4264405,
32-pin
fiPD4264405-A50,
4265405-A50
HPD4264405-A60,
4265405-A60
|
u729
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JU PD 426 4 40 0 , 4 2 6 5 4 0 0 64M -BIT DYNAMIC RAM 16 M-WORD BY 4-BIT FAST PAGE MODE D es c rip tio n The /iPD426440Q, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
|
OCR Scan
|
PDF
|
uPD4264400
uPD4265400
32-pin
426440Q
Q40-C
MPD4264400,
D4264400,
/1PD4264400GS-7JD,
4265400G5-7JD:
u729
D42644
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /xPD4264400, 4265400 64 M BIT DYNAMIC RAM 16M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The /iPD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
|
OCR Scan
|
PDF
|
/xPD4264400,
16M-WORD
/iPD4264400,
32-pin
264400-A
265400-A
/1PD4265400265400
P32LE-400A
|
Untitled
Abstract: No abstract text available
Text: MEC #iPD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The ¿¿PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced
|
OCR Scan
|
PDF
|
uPD42644
26/20-Pin
HPD42644
PD42644
JJPD42644
PPD42644
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM
|
OCR Scan
|
PDF
|
MC-4216LFF72
16M-WORD
72-BIT
MC-4216LFF72
uPD4264405
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM
|
OCR Scan
|
PDF
|
MC-4216LFH641
16M-W
64-BIT
MC-4216LFH641
uPD4264405
C-4216LFH641-A50
C-4216LFH641-A60
|
d42s65405g5
Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD42S64405
uPD4264405
uPD42S65405
uPD4265405
64M-BIT
PD42S64405,
42S65405,
/iPD42S64405,
42S65405
32-pin
d42s65405g5
NEC D42S65405
D42S65405G5-A50-7J
D42S65405
42S844Q5G5-A60
IC MARKING A60
MPD42S64405
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¿PD4264405, 4 2 S 6 5 4 0 5 ,4265405 are 16,777,216 words by 4 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD4264405
uPD42S65405
uPD4265405
PD4264405,
PD42S65405
32-pin
PD4264405-A50
PD42S65405-A50,
4265405-A50
|
D4264400
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability
|
OCR Scan
|
PDF
|
uPD4264400
uPD4265400
32-pin
iPD4264400-A50
265400-A
MPD4264400.
MPD4264400G5-7JD,
4265400G5-7JD:
D4264400
D42644
|
NEC uPD
Abstract: 4264405 D42S65405
Text: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.
|
OCR Scan
|
PDF
|
uPD4264405
uPD42S65405
uPD4265405
/PD4264405,
42S65405,
42S65405
32-pin
JPD4264405-A50
PD42S65405-A50,
NEC uPD
4264405
D42S65405
|
Untitled
Abstract: No abstract text available
Text: PRELIM INARY DATA SHEET M OS INTEG RATED CIRCUIT NEC juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /JPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD4264405
uPD4265405
/JPD4264405
1PD4264405,
32-pin
PD4264405-A50,
4265405-A50
PD4264405-A60,
4265405-A60
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PP4264400, 4 2 6 5 4 0 0 64 M BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
|
OCR Scan
|
PDF
|
PP4264400,
uPD4264400
uPD4265400
32-pin
/JPD4264400-A50
PD4265400-A50
/JPD4264400-A60
PD4265400-A60
PD4264400-A70
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility
|
OCR Scan
|
PDF
|
uPD4264400
uPD4265400
jjPD4264400-A50
MPD4264400,
P32LE-400A
040-o
16tooo5
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM :
|
OCR Scan
|
PDF
|
MC-4216LFF721
16M-WORD
72-BIT
MC-4216LFF721
uPD4264405
MC-4216LFF721-A50
MC-4216LFF721-A60
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
|
OCR Scan
|
PDF
|
uPD4264400
uPD4265400
PD4264400,
32-pin
264400-A
265400-A
PD4265400-A
PD4264400-A80
|
Untitled
Abstract: No abstract text available
Text: ÍIPD42644 1,048,576 X 4-Bit Silicon File 1^ 1M-J W NEC Electronics Inc. October 1992 Description Pin Configurations The ¡j PD 42644 is a fast-page, low-pow er dynam ic RAM o rganized as 1,048,576 words by 4 bits and designed to o p e ra te from a single + 5 -v o lt power supply. Advanced
|
OCR Scan
|
PDF
|
IPD42644
26/20-Pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / M O S INTEGRATED CIRCUIT / /¿P P 4 2 6 44 0 0 , 4 2 6 5 4 0 0 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The iPD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAM s. The fast page mode
|
OCR Scan
|
PDF
|
iiPD4264400,
32-pin
pPD4264400-A50
P32LE-400A
016to
b4275Z5
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PP4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BtT, FAST PAGE MODE Description The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption
|
OCR Scan
|
PDF
|
PP4264400,
uPD4264400
uPD4265400
32-pin
PPD4264400-A50
PD426540G-A5G
PD4264400-A60
/PD4265400-A60
040tocS
|
V/PD4264405
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The iiP D 4264405.4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD4264405
uPD4265405
32-pin
jjPD42644Q5-A50
20t8o8
XiPD4264405,
/1PD4264405G5-7JD,
4265405G5-7J0:
V/PD4264405
|