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    IPI111N15N3 Price and Stock

    Infineon Technologies AG IPI111N15N3GAKSA1

    Trans MOSFET N-CH 150V 83A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI111N15N3GAKSA1)
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    Avnet Americas IPI111N15N3GAKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPI111N15N3GAKSA1
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    Verical IPI111N15N3GAKSA1 2,500 500
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    Rochester Electronics IPI111N15N3GAKSA1 1
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    TME IPI111N15N3GAKSA1 1
    • 1 $3.61
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    EBV Elektronik IPI111N15N3GAKSA1 17 Weeks 500
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    Infineon Technologies AG IPI111N15N3 G

    MOSFETs N-Ch 150V 83A I2PAK-3 OptiMOS 3
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    Mouser Electronics IPI111N15N3 G
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    IPI111N15N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI111N15N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: I2PAK (TO-262); VDS (max): 150.0 V; RDS (on) (max) (@10V): 11.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 83.0 A; Original PDF
    IPI111N15N3GAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 83A TO262-3 Original PDF

    IPI111N15N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode D83

    Abstract: 111N15N 108N15N d83 diode IPP11N15N3 D83 I D83-004 diode 108n15 IEC61249-2-21 PG-TO220-3
    Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 10.8 mΩ 83 ID A • Very low on-resistance R DS(on)


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    PDF IPB108N15N3 IPP111N15N3 IPI111N15N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 diode D83 111N15N 108N15N d83 diode IPP11N15N3 D83 I D83-004 diode 108n15 IEC61249-2-21 PG-TO220-3

    B55Q

    Abstract: No abstract text available
    Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


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    PDF IPB108N15N3 IPP111N15N3 IPI111N15N3 B55Q

    Untitled

    Abstract: No abstract text available
    Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( )(&0 Y I9 0+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB108N15N3 IPP111N15N3 IPI111N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9?

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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