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    diode D83

    Abstract: 111N15N 108N15N d83 diode IPP11N15N3 D83 I D83-004 diode 108n15 IEC61249-2-21 PG-TO220-3
    Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 10.8 mΩ 83 ID A • Very low on-resistance R DS(on)


    Original
    PDF IPB108N15N3 IPP111N15N3 IPI111N15N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 diode D83 111N15N 108N15N d83 diode IPP11N15N3 D83 I D83-004 diode 108n15 IEC61249-2-21 PG-TO220-3