IRF323 Search Results
IRF323 Price and Stock
Rochester Electronics LLC IRF323N-CHANNEL HERMETIC MOS HEXFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF323 | Bulk | 901 | 355 |
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Buy Now | |||||
International Rectifier IRF323N-Channel HERMETIC MOS HEXFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF323 | 901 | 1 |
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Buy Now |
IRF323 Datasheets (16)
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ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
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IRF323 |
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2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 ?, N-Channel Power MOSFETs | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 |
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N-Channel Power MOSFETs, 3.0 A, 350-400 V | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 |
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POWER MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Frederick Components | Power MOSFET Selection Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | International Rectifier | TO-3 N-Channel Hexfet Power MOSFETS | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Motorola | European Master Selection Guide 1986 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Unknown | Shortform Transistor PDF Datasheet | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 | Unknown | Semiconductor Master Cross Reference Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323 |
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N-CHANNEL POWER MOSFETS | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF323 | Siliconix | MOSPOWER Design Data Book 1983 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF323R | Unknown | Shortform Datasheet & Cross References Data | Short Form |
IRF323 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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IRF3205 application
Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
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Original |
1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 application irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2 | |
Contextual Info: IRF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)11 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55õ |
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IRF323 | |
IRF3205 application
Abstract: IRF3205 IR IRF3205S
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OCR Scan |
IRF32305S) IRF3205L) IRF3205 application IRF3205 IR IRF3205S | |
IFR320Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate |
OCR Scan |
IRF320, IRF321, IRF322, IRF323 RF322, IFR320 | |
ifr320Contextual Info: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate |
Original |
IRF320, IRF321 IRF322, IRF323 TA17404. ifr320 | |
IFR320
Abstract: IRF322 IRF320
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OCR Scan |
IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320 | |
ifr320
Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
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Original |
IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202 | |
AN-994
Abstract: IRF3205 IRF3205L
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Original |
1304B IRF3205S/L IRF32305S) IRF3205L) AN-994 IRF3205 IRF3205L | |
IRF3205 equivalent
Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
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1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 equivalent IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L | |
IRF322
Abstract: IRF320 250M IRF321 IRF323
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OCR Scan |
IRF320, IRF321, IRF322, IRF323 50V-400V IRF322 IRF323 75BVQSS IRF320 250M IRF321 | |
9314h
Abstract: International Rectifier MOSFET 443 K 3911 1RF322
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OCR Scan |
IRF321 1RF322 IRF323 T0-204AA G-111 IRF320, IRF321, IRF322, IRF323 T-39-11 9314h International Rectifier MOSFET 443 K 3911 | |
IRF320Contextual Info: IRF320, IRF321 IRF322, IRF323 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package F e a tu re s T O -2 0 4 A A • 2.8A and 3.3A , 3 5 0 V - 4 0 0V BOTTOM VIEW • r D S o n = 1 - 8 f î a n d 2 .5 C I • S O A is P o w er-D issip atio n Lim ited |
OCR Scan |
IRF320, IRF322, IRF323 IRF320 | |
IRF3205 application
Abstract: IRF32305S marking za mosfet MOSFET MARKING ZA
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OCR Scan |
IRF32305S) IRF3205L) 1304B IRF3205S/L IRF3205 application IRF32305S marking za mosfet MOSFET MARKING ZA | |
sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
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Original |
2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B | |
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DATA SHEET IRF331
Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
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OCR Scan |
IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH | |
irf840
Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
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OCR Scan |
IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55 | |
1RF321
Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
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OCR Scan |
IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 | |
irf250
Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
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OCR Scan |
PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133 | |
irf150
Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
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OCR Scan |
PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK134 2SK133 IRF223 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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OCR Scan |
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5109dContextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d | |
BUZ24
Abstract: IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK132 2SK133 VN67AF HPWR-6503
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OCR Scan |
PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 BUZ24 IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK133 VN67AF | |
MTM2N85
Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
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OCR Scan |
IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D MTM2N85 IVN6200CNH IVN6200CNM | |
irf420
Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
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OCR Scan |
IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf420 IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A |