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Vishay Siliconix IRF614SPBF MOSFET N-CH 250V 2.7A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF614SPBF	Tube	800		1	1 $2.46 10 $1.583 100 $2.46 1000 $0.8673 10000 $0.8673	Buy Now
Bristol Electronics	IRF614SPBF		650			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF614SPBF		520			1 $2.236 10 $2.236 100 $2.236 1000 $1.0342 10000 $1.0342	Buy Now
Rochester Electronics LLC IRF614 ADVANCED POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF614	Bulk			695	1 - 10 - 100 - 1000 $0.44 10000 $0.44	Buy Now
Vishay Siliconix IRF614 MOSFET N-CH 250V 2.7A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF614	Tube			1,000	1 - 10 - 100 - 1000 $1.4136 10000 $1.4136	Buy Now
Vishay Siliconix IRF614S MOSFET N-CH 250V 2.7A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF614S	Tube			1,000	1 - 10 - 100 - 1000 $1.68 10000 $1.68	Buy Now
Vishay Siliconix IRF614L MOSFET N-CH 250V 2.7A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF614L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRF614 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF614	Intersil	2.0A, 250V, 2.0 ?, N-Channel Power MOSFET	Original	PDF
IRF614	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF614	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.7A TO-220AB	Original	PDF
IRF614	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF614	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 2.7A, Pkg Style TO-220AB	Scan	PDF
IRF614	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF614	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF614	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF614	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF614	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF614	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF614	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF614	Unknown	FET Data Book	Scan	PDF
IRF614A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

IRF614A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF614B	Fairchild Semiconductor	250 V N-Channel MOSFET	Original	PDF
IRF614B	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRF614B_FP001	Fairchild Semiconductor	250V N-Channel B-FET / Substitute of IRF614 & IRF614A	Original	PDF
IRF614L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.7A TO-262	Original	PDF
IRF614L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRF614 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF614 Abstract: No abstract text available Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration	Original	IRF614, SiHF614 O-220 O-220 18-Jul-08 IRF614	PDF
IRF614 Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRF614 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	IRF614 O-220 IRF614	PDF
Untitled Abstract: No abstract text available Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF614S, SiHF614S 2002/95/EC O-263) 11-Mar-11	PDF
IRFS614B Abstract: IRF614B Text: IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF614B/IRFS614B O-220 IRFS614B IRF614B	PDF
MOSFET 200v 20A n.channel Abstract: IRF614 TB334 Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified	Original	IRF614 TA17443 MOSFET 200v 20A n.channel IRF614 TB334	PDF
Untitled Abstract: No abstract text available Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	IRF614S, SiHF614S 2002/95/EC O-263) 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRF614S, SiHF614S SMD-220 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements	Original	IRF614, SiHF614 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF614 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.7 I(DM) Max. (A) Pulsed I(D)1.7 @Temp (øC)100õ IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)36 Minimum Operating Temp (øC)-55õ	Original	IRF614	PDF
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRF614A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	IRF614A O-220	PDF
Untitled Abstract: No abstract text available Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements	Original	IRF614, SiHF614 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF614S, SiHF614S 2002/95/EC O-263) O-26electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRF614S, SiHF614S SMD-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration	Original	IRF614, SiHF614 O-220 12-Mar-07	PDF

Untitled Abstract: No abstract text available Text: IRF614S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 . 0 Q. ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	IRF614S	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	GG17273 IRF614/615 IRF614 IRF615 IBF615	PDF
IRF614A Abstract: No abstract text available Text: IRF614A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 evi ^DS on = II ♦ Rugged Gate Oxide Technology 2 .0 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	IRF614A IRF614A	PDF
Untitled Abstract: No abstract text available Text: IRF614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 250V	OCR Scan	IRF614A Ran06	PDF
CI LA 4303 Abstract: LA 4301 irf614 Text: 2î H A R R IRF614 I S SEMICONDUCTOR N-Channel Power MOSFETs Avalanche Energy Rated M ay 1992 Package Features • 2.0A, 250V T0-220AB TOP VIEW • rDS ON = • Single Pulse Avalanche Energy Rated DRAIN (FLANGE) • SOA Is Power-Dlsslpation Limited u • Nanosecond Switching Speeds	OCR Scan	IRF614 T0-220AB 200Vv IRF614 CI LA 4303 LA 4301	PDF
Untitled Abstract: No abstract text available Text: IRF614A Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology 00 evi Q II ♦ Lower Input Capacitance 250 V 2.0Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 250V	OCR Scan	IRF614A	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF614 FEATURES • Low er R d s j o n • Improved inductive ruggedness • Fast switching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability	OCR Scan	IRF614 7TL4142	PDF
smd 42t Abstract: No abstract text available Text: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V	OCR Scan	IRF614S SMD-220 465S4S2 DD21451 smd 42t	PDF
Untitled Abstract: No abstract text available Text: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET	OCR Scan	IRF614	PDF
IRF614S Abstract: No abstract text available Text: IRF614S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^D S o n = ♦ Lower Input Capacitance _Q ♦ Improved Gate Charge CO c\i II ♦ Rugged Gate Oxide Technology 250 V 2.0 a A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	IRF614S IRF614S	PDF

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IRF614 Datasheets (35)

IRF614 Datasheets Context Search

IRF614

IRF614

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IRFS614B

MOSFET 200v 20A n.channel

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IRF614A

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CI LA 4303

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smd 42t

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IRF614S