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    IRFD024 Search Results

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    IRFD024 Price and Stock

    Vishay Siliconix IRFD024PBF

    MOSFET N-CH 60V 2.5A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD024PBF Bulk 252 1
    • 1 $2.43
    • 10 $1.564
    • 100 $2.43
    • 1000 $2.43
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    RS IRFD024PBF Bulk 2,500
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    • 10000 $1.3
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    ComSIT USA IRFD024PBF 2,100
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    New Advantage Corporation IRFD024PBF 9,300 1
    • 1 -
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    • 100 $0.9308
    • 1000 $0.9308
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    Vishay Siliconix IRFD024

    MOSFET N-CH 60V 2.5A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD024 Tube
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    Quest Components IRFD024 40
    • 1 $2.4
    • 10 $2.4
    • 100 $1.44
    • 1000 $1.44
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    Vishay Intertechnologies IRFD024PBF

    Power MOSFET, N-Ch, VDSS 60V, RDS(ON) 0.1Ohm, ID 2.5A, HD-1,PD 1.3W, VGS+/-20V, Qg 25nC | Vishay PCS IRFD024PBF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IRFD024PBF Bulk 12 Weeks 1
    • 1 $2.36
    • 10 $2.07
    • 100 $1.89
    • 1000 $1.77
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    Bristol Electronics IRFD024PBF 907 3
    • 1 -
    • 10 $1.755
    • 100 $1.4625
    • 1000 $0.819
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    Quest Components IRFD024PBF 400
    • 1 $3.12
    • 10 $3.12
    • 100 $3.12
    • 1000 $1.014
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    TTI IRFD024PBF Tube 100
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    • 100 $0.99
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    TME IRFD024PBF 2,549 1
    • 1 $1.72
    • 10 $1.16
    • 100 $0.88
    • 1000 $0.67
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    Chip One Stop IRFD024PBF Bulk 30
    • 1 $1.04
    • 10 $0.832
    • 100 $0.832
    • 1000 $0.832
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    International Rectifier IRFD024

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD024 2,161 1
    • 1 $8.775
    • 10 $6.5813
    • 100 $5.265
    • 1000 $5.0456
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    IRFD024 10
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    Quest Components IRFD024 1,120
    • 1 $11.7
    • 10 $11.7
    • 100 $11.7
    • 1000 $6.1425
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    IRFD024 514
    • 1 $4.5528
    • 10 $4.5528
    • 100 $2.8076
    • 1000 $2.504
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    IRFD024 460
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $1.2
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    IRFD024 96
    • 1 $3.84
    • 10 $3.84
    • 100 $1.92
    • 1000 $1.92
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    IRFD024 41
    • 1 $3.84
    • 10 $2.4
    • 100 $2.112
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    IRFD024 27
    • 1 $3.84
    • 10 $2.4
    • 100 $2.4
    • 1000 $2.4
    • 10000 $2.4
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    ComSIT USA IRFD024 1,999
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    INT'RECT IRFD024

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD024 295
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    IRFD024 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD024 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD024 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP Original PDF
    IRFD024 International Rectifier Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) Scan PDF
    IRFD024 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD024 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD024 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD024 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 2.5A, Pkg Style HEXDIP Scan PDF
    IRFD024 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD024 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD024PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFD024PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP Original PDF

    IRFD024 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFD024

    Abstract: No abstract text available
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 11-Mar-11 IRFD024 PDF

    irfd024

    Abstract: No abstract text available
    Text: PD - 9.699B IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 1.6


    Original
    IRFD024 10sec 1E-006 irfd024 PDF

    marking dut

    Abstract: P-CHANNEL isd xxxx
    Text: PD- 95933 IRFD024PbF • Lead-Free www.irf.com 1 10/27/04 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original
    IRFD024PbF IRFD120 marking dut P-CHANNEL isd xxxx PDF

    IRFD024

    Abstract: ls 2466
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024 ls 2466 PDF

    IRFD024

    Abstract: No abstract text available
    Text: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20


    Original
    9699C IRFD024 10sec 12-Mar-07 IRFD024 PDF

    IRFD024

    Abstract: SiHFD024
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 18-Jul-08 IRFD024 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20


    Original
    9699C IRFD024 10sec 08/25/ded 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFD024

    Abstract: No abstract text available
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN609

    Abstract: IRFD024
    Text: IRFD024_RC, SiHFD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    IRFD024 SiHFD024 AN609, 5568m 2847m 0564m 3390m 25-Oct-10 AN609 PDF

    IRFD024PBF

    Abstract: IRFD120
    Text: PD- 95933A IRFD024PbF • Lead-Free ± 20 www.irf.com 1 08/25/05 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original
    5933A IRFD024PbF IRFD120 IRFD024PBF IRFD120 PDF

    IRFD120

    Abstract: IRFD024PBF
    Text: PD- 95933A IRFD024PbF • Lead-Free ± 20 1 IRFD024PbF 2 IRFD024PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original
    5933A IRFD024PbF IRFD120 IRFD120 IRFD024PBF PDF

    SiHFD024

    Abstract: No abstract text available
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD024 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ


    Original
    IRFD024 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20


    Original
    9699C IRFD024 10sec PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95933A IRFD024PbF • Lead-Free ± 20 Document Number: 91126 08/25/05 www.vishay.com 1 IRFD024PbF Document Number: 91126 www.vishay.com 2 IRFD024PbF Document Number: 91126 www.vishay.com 3 IRFD024PbF Document Number: 91126 www.vishay.com 4 IRFD024PbF Document Number: 91126


    Original
    5933A IRFD024PbF 08-Mar-07 PDF

    S10 diode

    Abstract: IRFD024 VISHAY MARKING S10
    Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original
    IRFD024, SiHFD024 2002/95/EC 11-Mar-11 S10 diode IRFD024 VISHAY MARKING S10 PDF

    IRF0110

    Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
    Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123


    OCR Scan
    IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310 PDF

    Untitled

    Abstract: No abstract text available
    Text: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    GD1S01G IRFD024 S5M52 001SQ15 PDF

    IRFD024

    Abstract: OA 91 diode
    Text: International S Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 6 0 V


    OCR Scan
    IRFD024 IRFD024 OA 91 diode PDF

    C294

    Abstract: 1RFD024
    Text: PD - 9.699A International IGR Rectifier IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 60V


    OCR Scan
    IRFD024 C-293 C-294 C294 1RFD024 PDF

    irf0014

    Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
    Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123


    OCR Scan
    QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024 PDF

    1RFD024

    Abstract: IRFD024 DR17 UT-12V
    Text: International i “r Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d ss - 60V


    OCR Scan
    IRFD024 150KD 1RFD024 DR17 UT-12V PDF