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    IRFD122 Price and Stock

    Harris Semiconductor IRFD122

    IRFD122 - Small Signal, 1.1A, 100V, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFD122 196 1
    • 1 $0.455
    • 10 $0.455
    • 100 $0.4277
    • 1000 $0.3868
    • 10000 $0.3868
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    IRFD122 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD122 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD122 General Electric (IRFD123) Field Effect Power Transistor Scan PDF
    IRFD122 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
    IRFD122 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD122 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD122 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD122 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD122 Unknown FET Data Book Scan PDF
    IRFD122 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD122 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD122(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD122R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD122R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD122R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD122 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		IRFD122 PDF

    IRFD123

    Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
    Text: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    Original     		IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    IRF0123

    Abstract: IRFD122 IRFD123
    Text: [F FIELD EFFECT POWER TRANSISTOR ]CZ T h is series of N -C h a n n e i E n h a n ce m e n t-m o d e Pow er M O S F E T s utilizes G E 's advanced Power D M O S technology to achieve low on-reslstance with excellent device rugged­ ness and reliability. IRFD122.123


    OCR Scan     		IRFD122 IRF0123 IRFD123 PDF

    IRFD123

    Abstract: IRF0123 100MS IRFD122 transistor 123 DL
    Text: r a ? M ^ D lM ! S @ F IE F IRFD122.123 RELD EFFECT POWER TRANSISTOR 1.1 AMPERES 100,60 VOLTS RPS ON = 0-4 A This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		100MS 100ms- IRFD12 IRFD123 IRF0123 100MS IRFD122 transistor 123 DL PDF

    irfd121

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS


    OCR Scan     		IRFD121 IRFD122 IRFD123 PDF

    irfd123

    Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
    Text: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan     		IRFD120R, IRFD121R, IRFD122R, IRFD123R 0V-100V IRFD122R IRFD123R irfd123 2501a IRFD120R IRFD121R IRF012 PDF

    IRFD120

    Abstract: IRFD121 IRFD122 IRFD123 irfd1201
    Text: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O


    OCR Scan     		IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 IRFD121 IRFD122 irfd1201 PDF

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    1RFD123

    Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
    Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123 PDF

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143 PDF

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


    OCR Scan     		IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110 PDF

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540 PDF

    IRFD121

    Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
    Text: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		IRFD121, TB334 IRFD121 TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120 PDF

    IRF540R

    Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
    Text: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80


    OCR Scan     		to-204 t0-205 t0-220 to-247 IRFD113R IRFD111R IRFD123R IRFD121R IRFF113R IRFF111R IRF540R IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R PDF

    1RFD123

    Abstract: 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD120 IRFD122 IRFD210 IRFD212
    Text: - 276 - f m * M € tt € Vd s or + Vd g % V «e % £ té {Ta=25°C) Vg s Id (V) 1GSS Pd * /CH (A) V g s th) 1DSS CnA) m Vg s (V) ( M A) Vd s (V) fë £ (Ta=25'C) Id (oîi) Id (mA) Ciss Coss Crss (*typ) (*typ) (max) (pF) (max) (pF) (*typ) (max) (pF) ft


    OCR Scan     		IRFD120 CASE370-01 IRFD122 25RFZ42 O-220AB IRFZ44 MFE910 O-205AD 1RFD123 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD210 IRFD212 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii


    OCR Scan     		IRFD12 IRFD120R/121R/122R/123R 0-30n IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, PDF