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    Infineon Technologies AG IRG7PH30K10DPBF

    IGBT TRENCH 1200V 30A TO-247AC
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    DigiKey IRG7PH30K10DPBF Tube
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    International Rectifier IRG7PH30K10DPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    ComSIT USA IRG7PH30K10DPBF 150
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    IRG7PH30K10DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH30K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 30A 180W TO247AC Original PDF

    IRG7PH30K10DPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

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    Abstract: No abstract text available
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		IRG7PH30K10DPbF O-247AC PDF

    IRG7PH30K10D

    Abstract: C-150 IRG7PH30K10 1431tr
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		IRG7PH30K10DPbF O-247AC IRG7PH30K10D C-150 IRG7PH30K10 1431tr PDF