Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRG7PH50K10DPBF Search Results

    SF Impression Pixel

    IRG7PH50K10DPBF Price and Stock

    Rochester Electronics LLC IRG7PH50K10DPBF

    IGBT 1200V 90A TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH50K10DPBF Bulk 47
    • 1 -
    • 10 -
    • 100 $6.47
    • 1000 $6.47
    • 10000 $6.47
    Buy Now

    Infineon Technologies AG IRG7PH50K10DPBF

    IGBT 1200V 90A TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG7PH50K10DPBF Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    International Rectifier IRG7PH50K10DPBF

    IRG7PH50K10 - Discrete IGBT with Anti-Parallel Diode '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRG7PH50K10DPBF 4,310 1
    • 1 $6.22
    • 10 $6.22
    • 100 $5.85
    • 1000 $5.29
    • 10000 $5.29
    Buy Now
    ComSIT USA IRG7PH50K10DPBF 375
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IRG7PH50K10DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH50K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AC Original PDF

    IRG7PH50K10DPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irg7ph50

    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original
    IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original
    IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS


    Original
    IRG7PSH54K10DPbF IRG7PSH54K10DPbFÂ Super-247 JESD47F) PDF