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    IRG7PH50K10D Price and Stock

    Infineon Technologies AG IRG7PH50K10DPBF

    IGBT 1200V 90A 400W TO247AC
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    DigiKey IRG7PH50K10DPBF Tube
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    Rochester Electronics LLC IRG7PH50K10DPBF

    IGBT 1200V 90A TO247AC
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    DigiKey IRG7PH50K10DPBF Bulk 47
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    Rochester Electronics LLC IRG7PH50K10D-EPBF

    IGBT, 90A I(C), 1200V V(BR)CES,
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    DigiKey IRG7PH50K10D-EPBF Bulk 45
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    Infineon Technologies AG IRG7PH50K10D-EPBF

    IGBT 1200V 90A 400W TO247AD
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    International Rectifier IRG7PH50K10D-EPBF

    IRG7PH50K10 - Discrete IGBT with Anti-Parallel Diode '
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    Rochester Electronics IRG7PH50K10D-EPBF 9,698 1
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    IRG7PH50K10D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH50K10D-EPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AD Original PDF
    IRG7PH50K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 400W TO247AC Original PDF

    IRG7PH50K10D Datasheets Context Search

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    Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive


    Original     		PDF IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F)

    Untitled

    Abstract: No abstract text available
    Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS


    Original     		PDF IRG7PSH54K10DPbF IRG7PSH54K10DPbFÂ Super-247 JESD47F)