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    IRG8CH29K10F Search Results

    IRG8CH29K10F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG8CH29K10F Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF

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    IRG8CH29K10F

    Abstract: No abstract text available
    Text: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		IRG8CH29K10F IRG8CH29K10F PDF