IRG8CH29K10F Search Results

IRG8CH29K10F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG8CH29K10F		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE		Original	PDF

IRG8CH29K10F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRG8CH29K10F Abstract: No abstract text available Text: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features	Original	PDF	IRG8CH29K10F IRG8CH29K10F

Catalog Datasheet

MFG & Type

PDF

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IRG8CH29K10F

Abstract: No abstract text available
Text: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

Original

PDF

IRG8CH29K10F IRG8CH29K10F