IRGCC20UE
Abstract: IRGBC20U IRGCC20
Text: Previous Datasheet Index Next Data Sheet PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCC20UE
IRGCC20UE
NormiRGBC20U
IRGBC20U
IRGCC20
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IRGBC20U
Abstract: IRGCC20UE
Text: PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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Original
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PDF
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IRGCC20UE
IRGCC20UE
IRGBC20U
IRGBC20U
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Untitled
Abstract: No abstract text available
Text: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage
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OCR Scan
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IRGCC20UE
250pA,
250pA
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