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    IRGCC20 Search Results

    IRGCC20 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRGCC20 International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF
    IRGCC20UE International Rectifier IGBT Original PDF

    IRGCC20 Datasheets Context Search

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    IRGCC20UE

    Abstract: IRGBC20U IRGCC20
    Text: Previous Datasheet Index Next Data Sheet PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		PDF IRGCC20UE IRGCC20UE NormiRGBC20U IRGBC20U IRGCC20

    IRGBC20U

    Abstract: IRGCC20UE
    Text: PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF IRGCC20UE IRGCC20UE IRGBC20U IRGBC20U

    Untitled

    Abstract: No abstract text available
    Text: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage


    OCR Scan     		PDF IRGCC20UE 250pA, 250pA

    transistor tc 144

    Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40
    Text: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max


    OCR Scan     		PDF IRGBC20 IRGBC26 IRGBC30 IRGBC36 IRGBC40 IRGBC46 -220AB O-247AC IRGPC40 IRGCC20 transistor tc 144 IRGBC46 IRGPC56 for IR IGBT die D50 transistor IGBT die IRGCC50

    IRF1644

    Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
    Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.


    OCR Scan     		PDF 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R