IRGCC50ME

Abstract: IRGPC50M
Contextual Info: PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC50FE

Abstract: IRGPC50F
Contextual Info: PD-9.1425 TARGET IRGCC50FE IRGCC50FE IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC50KE

Abstract: IRGPC50K
Contextual Info: PD-9.1424 TARGET IRGCC50KE IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

IRGPC50M

Abstract: IRGCC50ME
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

irgpc50m

Contextual Info: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage

IRGCC50FE

Abstract: IRGPC50F IRGCC50
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1425 TARGET IRGCC50FE IRGCC50FE IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRGCC50KE

Abstract: IRGPC50K
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1424 TARGET IRGCC50KE IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Contextual Info: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage

transistor tc 144

Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40
Contextual Info: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.