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    IRGPH50M Search Results

    IRGPH50M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGPH50M International Rectifier Short Circuit Rated Fast IGBT Original PDF
    IRGPH50M International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGPH50M Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGPH50MD2 International Rectifier Short Circuit Rated Fast CoPack IGBT VCES = 1200V, VCE(sat) < 2.9V, atVGE = 15V, IC = 23A Original PDF
    IRGPH50MD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY Original PDF
    IRGPH50MD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGPH50M Datasheets Context Search

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    IRGPH50M

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGPH50M 10kHz) O-247AC C-476 IRGPH50M

    D-10

    Abstract: IRGPH50MD2 1838t
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 D-10 IRGPH50MD2 1838t

    IRGPH50M

    Abstract: C-471
    Text: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


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    PDF IRGPH50M 10kHz) O-247AC C-476 IRGPH50M C-471

    IRGPH50M

    Abstract: transistor BR 471 A
    Text: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


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    PDF IRGPH50M 10kHz) O-247AC C-476 IRGPH50M transistor BR 471 A

    1838 t

    Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 1838 t 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485

    1838t

    Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


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    PDF IRGPH50MD2 10kHz) O-247AC C-488 1838t 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


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    PDF IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06

    IRG4PH50KD

    Abstract: IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001
    Text: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


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    PDF 91575B IRG4PH50KD char20 IRG4PH50KD IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    IRG4PH50K

    Abstract: IRGPH50K IRGPH50M
    Text: PD - 9.1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


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    PDF IRG4PH50K IRG4PH50K IRGPH50K IRGPH50M

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


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    PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    igbt 20A 1200v

    Abstract: IRGCH50ME IRGPH50M
    Text: PD-9.1420 TARGET IRGCH50ME IRGCH50ME IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


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    PDF IRGCH50ME IRGCH50ME IRGPH50M igbt 20A 1200v IRGPH50M

    IRG4PH50K

    Abstract: IRGPH50K IRGPH50M
    Text: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed


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    PDF IRG4PH50K IRG4PH50K IRGPH50K IRGPH50M

    IRG4PH50KD

    Abstract: IRGPH50KD2 IRGPH50MD2
    Text: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


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    PDF 91575B IRG4PH50KD char52-7105 IRG4PH50KD IRGPH50KD2 IRGPH50MD2

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGPH50M 10kHz) O-247AC C-476

    TRANSISTOR C483

    Abstract: IRGPH50MD2
    Text: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses


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    PDF IRGPH50MD2 10kHz) O-247AC 5SM52 C-488 TRANSISTOR C483 IRGPH50MD2

    C-473

    Abstract: No abstract text available
    Text: bitemational P D -9.1030 Rectifier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGPH50M 10kHz) O-247AC C-473

    1838T

    Abstract: 1838 T TRANSISTOR C483 IRGPH50MD2
    Text: PD - 9.1047A International iôr]Rectifier IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces 1Short circuit rated -10[js @125°C, VGE= 15V 1Switching-loss rating includes all "tail" losses


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    PDF 10kHz) IRGPH50MD2 C-487 O-247AC C-488 1838T 1838 T TRANSISTOR C483 IRGPH50MD2

    TL 1838

    Abstract: IRG4PH50KD
    Text: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,


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    PDF IRG4PH50KD 10fis, TL 1838 IRG4PH50KD

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high


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    PDF IRG4PH50K t141b

    z922

    Abstract: IRG4PH50K 3020H
    Text: International I«R Rectifier PD - 9 .1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc=10fis, V cc = 720V , T j = 125°C, V g e = 15V • Combines low conduction losses with high


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    PDF IRG4PH50K 10fis, z922 IRG4PH50K 3020H

    IRGPH30M

    Abstract: No abstract text available
    Text: In te rn a tio n a l S U F te c tifie r IGBTs Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications Short-Circuit Rated - Optimized for Motor Control Applications FAST (cont.) 'c Part Number Continuous Collector Current VCES Collector to Emitter


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    PDF IRGDDN300M06 IRGDDN400M06 IRGDDN600M06 IRGRDN300M06 IRGRDN400M06 IRGPH30MD2 IRGPH40MD2 IRGPH50MD2 T0-247AC IRGKIN025M12 IRGPH30M